Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

An Analytical Model for Deriving the 3-D Potentials and the Front and Back Gate Threshold Voltages of a Mesa-Isolated Small Geometry Fully Depleted SOI MOSFET

“…(37), we have r t ≈ Then we can find that the derived λ for a rectangular shaped surrounding gate MOSFET becomes very similar to the result given in [20] where λ for a cylindrical surrounding gate MOSFET has been derived. Thus, we may check the validity of Eqs.…”

A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

“…(3) [6][7][8]. However, this requires the use of more complex mathematical formulae, and therefore, in our study, we assumed that Ψ 2D (z,r) took on a parabolic dependence in terms of the position in the silicon film as shown below:…”

“…In particular, attention is focused on multiple-gate MOSFETs because of their steep sub-threshold slope and low body-effect coefficient [1][2][3][4][5][6][7][8][9][10][11][12][13]. Among the various types of multiple-gate MOSFETs, SG MOSFETs exhibit the greatest reduction in SCE due to their excellent electrostatic-channel control [1][2][3][4][5][6][7][8][9][10][11]. Therefore, the results of research on SG MOSFETs should be highly helpful in permitting the realization of nanoscale device production in the future.…”