Reduction of drain induced barrier lowering by optimization Trimetal- GAA -Si -NW MOSFET in multimedia tools

We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold region in which the DIBL and source-to-drain tunneling effects were both taken into account. This paper introduces an approach to establishing the smoothing function for expressing the critical parameters in the model's overall operating regions. The resulting compact model was tested in a TCAD NEGF simulation, demonstrating good consistency.

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A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs

Yang

Zhang

et al. 2022

Nanomaterials

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Reduction of drain induced barrier lowering by optimization Trimetal- GAA -Si -NW MOSFET in multimedia tools

Cited by 1 publication

References 18 publications

A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs

A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs

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