A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs

Abstract

We propose a numerical compact model for describing the drain current in ballistic mode by using an expression to represent the transmission coefficients for all operating regions. This model is based on our previous study of an analytic compact model for the subthreshold region in which the DIBL and source-to-drain tunneling effects were both taken into account. This paper introduces an approach to establishing the smoothing function for expressing the critical parameters in the model's overall operating regions. The resulting compact model was tested in a TCAD NEGF simulation, demonstrating good consistency.

Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications

“…The critical length and carrier velocity at the source’s end and the channel’s start were identified using transport models. The ballistic, dual-gate nano transistors used for digital applications with a proper choice of the gate oxide thickness and scaling limit down to 10 nm were discussed [ 40 , 41 ]. Several studies have incorporated the operation of the nanowire in a ballistic regime using analytic models [ 42 , 43 , 44 , 45 ] and numerical simulations [ 46 , 47 ].…”