Multi-wafer batch synthesis of graphene on Cu films by quasi-static flow chemical vapor deposition

Abstract

The chemical vapor deposition (CVD) of graphene on thin Cu film wafers is highly desirable for the development of technological applications as it offers superior flatness, rigidity, high purity, and compatibility with conventional thin film techniques. Here, we report the high-throughput synthesis of uniform single-layer highly crystalline graphene on a batch of 3-inch wafers. The production throughput is optimized by using closely-packed vertically-standing wafers instead of placing them flat on a horizontal support. Significantly reducing convective gas transport is found to be essential to minimize the variation of graphene single crystal seeding density and growth rate across individual wafers. Given the very small amount of carbon required to grow an atomically-thin layer, we show that graphene can be grown under static gas flow conditions and that the growth rate does not significantly vary from one wafer to another, even within a large batch (∼25 wafers). These findings constitute an important technological step toward the manufacturing of graphene on an industrial scale and its integration into mainstream electronics or micro-electromechanical devices.

Quasistatic Equilibrium Chemical Vapor Deposition of Graphene

“…First, confined configurations are effective for building quasistatic conditions. [ 34,56 ] Ultimately, growth carboneous intermediates reside for longer periods around the growth surface, which increase the chances of growth. Second, such setups control/reduce growth bearing moieties flow reaching the substrate deposition face, guaranteeing nucleation density suppression.…”

“…In view of this, future research is required to achieve precise control on the frequency and location of nucleation number on the fabrication surfaces, and more importantly, to encourage confined approach intervened industrial scale fabrication, as shown in Figure 12e and references. [ 12,56 ] To overcome these limitations, a more detailed future study is vital, and the real‐time and in situ observations can help researchers gain a closer look at the changes inside the reaction chamber during graphene growth. Therefore, the collected information could be used to improve the existing graphene growth mechanism.…”

“…Graphene, a carbon atom thick layer can be easily fabricated under quasistatic flow conditions with the consumption of minimal C, this strategy enable to provide the required carbon to each wafer without considerably altering the growth rate across them, even stay constant for a big batch of around 25 wafers. [ 56 ] Similarly, Zhang et al. proposed a batch growth method and ensured back‐to‐back production via uniform distribution of growth active carbon plasma around each deposition platform.…”

“…Adapted with permission. [ 56 ] Copyright 2019, IOP Publishing. e) Photograph of multiple Cu foils fixed in quartz holder.…”

Experimental and Simulation Research on the Preparation of Carbon Nano-Materials by Chemical Vapor Deposition

“…Hu et al reported the relationship between gas flow rate and graphene structure quality and deposition uniformity [ 171 ]. The gas flow rate in the CVD furnace under different Cu substrate structures is simulated by CFD.…”