Multi-Watt Wideband MMICs in GaN and GaAs

Meharry, D. E.; Lender, R.; Chu, Kanin; Gunter, L.; Beech, K.E.

doi:10.1109/mwsym.2007.379980

Cited by 49 publications

(13 citation statements)

References 6 publications

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“…It is interesting to compare the GaN HEMT benchmarks [30], [31] with PHEMT [32] as it illustrates the circuit advantages of GaN HEMT. Because of the Pout versus impedance tradeoff described earlier, the GaN HEMT MMICs have a higher Pout (10-20 W versus 4-5 W), a wider bandwidth (2-20 GHz versus 4-18 GHz), and a higher efficiency (26% versus 23% average).…”

Section: Wideband Gan Hemt Mmic Pa Benchmarksmentioning

confidence: 99%

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

Komiak

2015

IEEE Microwave

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Section: Wideband Gan Hemt Mmic Pa Benchmarksmentioning

confidence: 99%

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

Komiak

2015

IEEE Microwave

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“…There are several techniques for wideband power amplifier design such as Distributed amplifier, shunt series feedback, common gate, LC ladder filter matched and etc [8][9][10]. Ideally, the high power amplifier must be broadband matched to a 50Ω antenna and provide high efficiency and linearity.…”

Section: Main and Peaking Power Amplifiermentioning

confidence: 99%

Nonlinear Analysis and Design of a mm-wave Wideband Doherty Power Amplifier

Taghian¹,

Abdipour²,

Roodaki³

et al. 2011

IJEE

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Abstract-This paper presents the design and nonlinear analysis of a mm-wave wideband Doherty power amplifier at 22 to 29GHz with 7GHz bandwidth, the design is done using 0.15µm GaAs PHEMT transistor to support a variety of mm-wave applications including point to point digital radio, LMDS/LMCS , ka-band satellite spacecraft and ISM applications. The wideband Doherty power amplifier provides greater than 21dBm of output power across 22-29 GHz, with a typical PAE of 35% and typical gain 15dB over the frequency range. The designed Doherty power amplifier also showed acceptable linearity when induced with two tone signal. Analysis results show that the Doherty power amplifier significantly improves both efficiency and linearity in power amplifier in comparison with the main amplifier.

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“…Monolithic microwave integrated circuits (MMIC) based on gallium nitride (GaN) high electron mobility transistors (HEMT) have the advantage of providing wideband power performance [1]. This capability has a great potential for communication and electronic warfare (EW) systems.…”

Section: Introductionmentioning

confidence: 99%

“…GaN offers higher power densities as has been demonstrated in multiple works at different frequency bands [4]- [5]. Furthermore, GaN HEMTs can operate at much higher drain voltages than GaAs allowing the use of smaller devices for the same output power [1]. Therefore, device impedances are higher, and improvement on broadband matching can be performed [6].…”

Section: Introductionmentioning

confidence: 99%

2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications

Gonzalez-Garrido

Grajal

Cubilla

et al. 2008

2008 European Microwave Integrated Circuit Conference

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This paper presents two MMIC broadband high power amplifiers of 4 mm of periphery at the output stage in the frequency band 2-6 GHz. The amplifiers are based on AlGaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They have been fabricated in two different european foundries: SELEX Sistemi Integrati and QINETIQ. SELEX has a gate process technology of 0.5μm, and devices of 10x100μm periphery in microstrip technology and QINETIQ has a gate-length of 0.25μm, and devices of 8x125μm in coplanar technology. The coplanar amplifier from QINETIQ has demonstrated an output power of 8W in continuous wave at V ds =20V which confirm model predictions. On the other hand, SELEX microstrip amplifier has a saturation power of 10W CW at V ds =25V and 4 GHz. This amplifier measured on-wafer in pulsed conditions exhibits a maximum power of 17W at V ds =30V.

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Multi-Watt Wideband MMICs in GaN and GaAs

Cited by 49 publications

References 6 publications

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

Nonlinear Analysis and Design of a mm-wave Wideband Doherty Power Amplifier

2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications

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