Multi-wavelength lasers fabricated by an Al layer controlled quantum well intermixing technology

Abstract

Articles you may be interested inSiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms J. Appl. Phys. 112, 093109 (2012); 10.1063/1.4764856Photoreflectance investigations of quantum well intermixing processes in compressively strained In Ga As P ∕ In Ga As P quantum well laser structures emitting at 1.55 μ m Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InPWe report that the shift in the band gap of Al 0.3 Ga 0.7 As/GaAs quantum well structures can be precisely controlled by an Al layer buried between a spin-on silica film and a wet-oxidized GaAs surface. The blueshift in wavelength of the Al 0.3 Ga 0.7 As/GaAs quantum well photoluminescence ͑PL͒ depends linearly on the thickness of the buried Al layer. By changing the Al layer thickness, the PL peak wavelength can be tuned from 7870 Å for the as-grown sample to 7300 and 7050 Å after 20 and 45 s rapid thermal annealing at 850°C, respectively. Applying this technology, Al layers with different thickness, i.e., no Al, 200 and 300 Å thick, were applied to the oxidized GaAs surface in three adjacent regions with 200 m spacing on a quantum well laser structure sample. Three wavelength lasers were successfully fabricated in a single chip by a one step rapid thermal annealing. All the lasers have similar threshold current and slope efficiency.