Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

Fu, Lan; Wong‐Leung, Jennifer; Deenapanray, Prakash; Tan, Hark Hoe; Jagadish, Chennupati; Gong, Bin; Lamb, Robert N.; Cohen, Ronald S.; Reichert, William M.; Dao, Lap Van; Gal, M.

doi:10.1063/1.1503857

Cited by 36 publications

(11 citation statements)

References 26 publications

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“…This model was proposed by Mark and Helfrich 11 and has been widely used to explain the J-V characteristics of inorganic amorphous dielectrics and organic semiconductor materials. [12][13][14] We analyzed the J-V characteristics of the PTVTF polymeric layer using the SCLC theory assuming an exponential trap distribution. The result was quite reasonable compared to that obtained by time of flight ͑ToF͒ analysis.…”

Section: Origin Of High Mobility Within An Amorphous Polymeric Semicomentioning

confidence: 99%

Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution

Chung

Lee

Yang

et al. 2008

Applied Physics Letters

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To elucidate the origin of the high field-effect mobility (≈0.02cm2∕Vs) of amorphous poly[(1,2-bis-(2′-thienyl)vinyl-5′,5″-diyl)-alt-(9,9-dioctyldecylfluorene-2,7-diyl], we investigated the current density–voltage (J-V) and mobility–voltage (μ-V) relationships as a function of temperature. By using the power law model and the Gaussian hopping model, we determined a characteristic trap energy of 67meV, an energetic disorder parameter of 64meV, and a total trap density of 2.5×1016cm−3, comparable to that of poly(3-hexylthiophene). We conclude that the relatively low trap density, which originates from the grain-boundary-free amorphous nature of the semiconductor, enables this high field-effect mobility.

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Section: Origin Of High Mobility Within An Amorphous Polymeric Semicomentioning

confidence: 99%

Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution

Chung

Lee

Yang

et al. 2008

Applied Physics Letters

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“…5 If the strain created is large enough it will also penetrate into the underlying layers. A compressively strained interface enhances the movement of the Ga vacancies created at the capping layer/GaAs interface during annealing, whereas tensile strain will trap these vacancies at the interface creating large defect clusters.…”

Section: Introductionmentioning

confidence: 99%

Impurity free vacancy disordering of InGaAs quantum dots

Lever¹,

Tan²,

Jagadish³

2004

Journal of Applied Physics

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Influence of dielectric deposition parameters on the In 0.2 Ga 0.8 As / GaAs quantum well intermixing by impurity-free vacancy disordering Dependence of band gap energy shift of In 0.2 Ga 0.8 As/GaAs multiple quantum well structures by impurity-free vacancy disordering on stoichiometry of SiO x and SiN x capping layersThe effect of thermal interdiffusion on In͑Ga͒As/ GaAs quantum dot structures is very significant, due to the large strain and high concentration of indium within the dots. The traditional high temperature annealing conditions used in impurity free vacancy disordering of quantum wells cannot be used for quantum dots, as the dots can be destroyed at these temperatures. However, additional shifts due to capping layers can be achieved at low annealing temperatures. Spin-on-glass, plasma enhanced chemical vapor deposited SiO 2 , Si 3 N 4 , and electron-beam evaporated TiO 2 layers are used to both enhance and suppress the interdiffusion in single and stacked quantum dot structures. After annealing at only 750°C the different cappings enable a shift in band gap energy of 100 meV to be obtained across the sample.

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“…27 On the other hand, SrTiO 3 may also cause reduction of Ga vacancies generation possibly due to various factors during annealing such as layer quality, diffusion of inherent defects, and the metallurgical reaction between GaAs and SrTiO 3 films. 32 Note that, at 725°C, a PL blue shift accompanied by a broad emission with peak at ES rather than GS (shoulder at longer wavelength region) is observed, indicating that the limit for intermixing inhibition is up to 700°C. We postulate that the emission peaks observed at 1125 and 1050 nm is from the GS and ES of highly interdiffused QDs with small sizes, and the long wavelength shoulder to the GS emission of least interdiffused QDs with larger size where the interdiffusion is minimal.…”

Section: Plasma-enhanced Chemical Vapor Depositionmentioning

confidence: 99%

InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

et al. 2015

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Abstract. We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO 2 and Si 3 N 4 films, HfO 2 and SrTiO 3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175 nm (>148 meV ) is obtained for HfO 2 capped sample. Likewise, investigation of TiO 2 , Al 2 O 3 , and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ∼1060─1200 nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green-yellow-orange coherent light generation, as well as addressing photonic integration via areaselective, and postgrowth bandgap engineering.

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Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

Cited by 36 publications

References 26 publications

Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution

Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution

Impurity free vacancy disordering of InGaAs quantum dots

InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

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