Multicolor Luminescence from Semiconductor Nanocrystal Composites Tunable in an Electric Field

MoS2 memristor with photoresistive switching

“…In the case of 2 H MoS 2 nanospheres consisting of monolayers, the polarization phenomenon can control the switching resistance 27 . Furthermore, nanosphere lattice, as reported 31 can affect the electronic band gap, while the optical spectrum of nanoparticles can be changed in an electric field 32 33 or under light 34 35 . Photodetectors constructed, for example, using ZnO spheres as building blocks demonstrate a high and fast photoresponse 36 .…”

Novel Green Luminescent and Phosphorescent Material: Semiconductive Nanoporous ZnMnO with Photon Confinement

“…In addition, the semiconductor LDs with RGB phosphors come to provide better efficiencies for high-performance laser projectors that can display or transmit the information data. Furthermore, the usage of semiconductive RGB light-emitters and light-converters with a shorter carrier lifetime enables us to electrically switch the wavelength of light, − to adjust the color of light, − and to improve the speed of data transmission. , Very recently, additionally, the voltage-tunable multicolor emission was demonstrated on an organic–inorganic hybrid LED, which had been composed of highly luminescent polymer and semiconductive phosphorescent materials . These give us a hint to realize the high-performance optoelectronic devices for future SSL and VLC thorough utilizing the novel-functional semiconductive light-emitting or light-converting materials.…”

Growth and Structure of Single-Crystal ZnO Nanorods Codoped with Fe and Li for Multiferroic Applications

“…52−54 It should be noted that the interband transition in the near-ultraviolet region is suppressed at a sufficiently high density of deep-level defects. 38 ZnO nanorods with 2.05% Fe and 1.95% Li exhibit strong luminescence due to dopant defects, and band-to-band transition and luminescence are strongly suppressed due to more efficient recombination through deep levels associated with Li and Fe. The emission band covering the range from 2.0 eV (600 nm) to 1.7 eV (730 nm) is associated with a series of differently charged complexes Fe Zn −Li Zn and Li−O complexes 32,55 as well as complexes Fe Zn 3+ ions.…”

“…The luminescence band covering the spectral range from 4.0 eV (310 nm) to 2.0 eV (620 nm) was fitted with a single Gaussian function centered at 2.762 eV (~449 nm). However, it is highly likely that the emission in such a broad range arises due to exciton and deep levels of such intrinsic defects as zinc vacancies and oxygen interstices, which give emission in the ranges around 3.26 eV (380 nm), from 3.06 eV (405 nm) to 2.75 eV (450 nm) and from 2.48 eV (500 nm) to 2.25 eV (550 nm), respectively, and overlap due to strong phonon broadening at room temperature. − It should be noted that the interband transition in the near-ultraviolet region is suppressed at a sufficiently high density of deep-level defects . ZnO nanorods with 2.05% Fe and 1.95% Li exhibit strong luminescence due to dopant defects, and band-to-band transition and luminescence are strongly suppressed due to more efficient recombination through deep levels associated with Li and Fe.…”

“…Improved ferroelectric, dielectric, and optical properties of Li-doped ZnO nanorods taking into account confined geometry have also been reported . It is noteworthy that the shape, size, and doping of nanostructures can control their electronic and optical properties, which is promising for creating innovative optoelectronic and multifunctional devices. − …”