Multiconfiguration Hartree-Fock calculations for ions of the boron isoelectronic sequence

Dankwort, W.; Trefftz, E.

doi:10.1088/0022-3700/10/13/009

Cited by 42 publications

(23 citation statements)

References 15 publications

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“…C II The observed energy levels for the 2s 2 2p, 2s 2p 2 , 2p 3 , 2s 2 3s, and 2s 2 3p configurations are from Kelly (1987) and are complete. Oscillator strengths and A values are taken from Dankwort & Trefftz (1978), Nussbaumer & Storey (1981), Lennon et al (1985), and . Radiative transition probabilities for C II have been measured in the laboratory by Fang et al (1993).…”

Section: The Boron Isoelectronic Sequencementioning

confidence: 99%

“…Zhang (1995) has confirmed that their published collision strengths involving these two levels must be exchanged to reflect this. Dankwort & Trefftz (1978) appear to have simply exchanged labels so that of the two, the 2 P 1/2 levels always has the higher energy. Figure 2 shows an example of the use of the Zhang et al R-matrix collision strengths for the case of Si X.…”

Section: N IIImentioning

confidence: 99%

“…The values for the observed energy levels were taken from NIST (Martin et al 1995) and Edlen (1981). For the n = 2 levels, the oscillator strengths and A values were generally from Dankwort & Trefftz (1978) except for the 2s2p 2 2 S 1/2 and 2 P 1/2 levels which were from Sampson et al (1986). The ground term fine structure A value was obtained by extrapolating the values of .…”

Section: Ni XXIVmentioning

confidence: 99%

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CHIANTI - an atomic database for emission lines

Dere

Landi

Mason

et al. 1997

Astron. Astrophys. Suppl. Ser.

1,982

1,669

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Abstract. A comprehensive set of accurate atomic data is required for analyses of astrophysical and solar spectra. CHIANTI provides a database of atomic energy levels, wavelengths, radiative data and electron excitation data for ions which are abundant in cosmic plasmas. The most recent electron excitation data have been assessed and stored following the method of Burgess & Tully (1992). The current version is essentially complete for specifying the emission spectrum at wavelengths greater than 50Å. A list of observed lines in the spectral region between 50 and 1100Å has been compiled and compared with the lines predicted by the CHIANTI database. The CHIANTI database reproduces the vast majority of lines observed at these wavelengths. CHIANTI includes IDL (Interactive Data Language) routines to calculate optically thin synthetic spectra for equilibrium conditions. IDL routines to calculate theoretical line intensities required for electron density or temperature diagnostics and emission measure studies are also included. The CHIANTI atomic database and supporting IDL routines are available by anonymous FTP.

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Section: The Boron Isoelectronic Sequencementioning

confidence: 99%

Section: N IIImentioning

confidence: 99%

Section: Ni XXIVmentioning

confidence: 99%

See 1 more Smart Citation

CHIANTI - an atomic database for emission lines

Dere

Landi

Mason

et al. 1997

Astron. Astrophys. Suppl. Ser.

1,982

1,669

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“…Taking electron impact excitation rates from Stafford et al (1994) for N III and Zhang et al (1994) for O IV, A-coefficients from Nussbaumer & Storey (1979) for N III and Nussbaumer & Storey (1982) for O IV, supplemented by values from Dankwort Trefftz (1978) for some of the higher lying levels, these ratios are plotted as a function of temperature for electron densities of 10 9 , 10 10 , and 10 11 cm −3 in Figs. 8 and 9. , 10 10 , and 10 11 cm −3 , indicated by the three solid lines.…”

Section: Spectroscopic Diagnostics With Sumermentioning

confidence: 99%

The solar disk spectrum between 660 and 1175 Å (first order) obtained by SUMER on SOHO

Curdt

Feldman

Laming

et al. 1997

Astron. Astrophys. Suppl. Ser.

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Abstract. SUMER -Solar Ultraviolet Measurements of Emitted Radiation -onboard of SOHO -Solar and Heliospheric Observatory -obtained its first spectrum on January 25, 1996 near the north polar limb. The range from 660Å to 1175Å which has never before been observed with such a good spectral resolution contains a wealth of spectroscopic details. Identification of about 400 lines in this spectral range is given. We list the wavelengths of identified transitions and provide their absolute peak intensities. General spectral features of the most abundant elements H, He, C, N, O, Ne, Mg, Si, S, Ar, and Fe are described. In this spectral range many density-and temperature-sensitive line pairs are found. It is shown in examples how they can be used as diagnostic tools.

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“…Most of the states of interest are low lying states of highly ionized atoms which decay to the ground state by An--O transitions. 2, 3, [5][6][7][8][9][10][11][12][13][14][15][16] only. Lifetimes of Si X and neighbouring Si ionization stages are so far available from theoretical work [e.g.…”

Section: Introductionmentioning

confidence: 99%

Beam-foil lifetimes of highly ionized silicon

1977

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Electronically excited states of Si ions are created by passing a 20MeV Si s+ beam through a thin carbon foil. The EUV-radiation (2= 13-61 nm) emitted by the beam is analyzed using a grazing-incidence spectrometer. From the decay curves, lifetimes of 24 low lying levels in Si VIII to Si XII and of the 4f and 5 g levels of Si XI and Si XII are derived. Cascades from doubly excited states turn out to be an important contribution to the radiation observed. The lifetime values of this work are compared to theoretical data mainly of Wiese, Sinano~lu and Dankwort/Trefftz. Most experimental values agree with at least one of the theoretical values. The decay time 560 ps of the 2s2p 3 3D~ state of Si IX is clearly longer than the theoretical prediction (highest value 455 ps by Sinano~lu).

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Multiconfiguration Hartree-Fock calculations for ions of the boron isoelectronic sequence

Cited by 42 publications

References 15 publications

CHIANTI - an atomic database for emission lines

CHIANTI - an atomic database for emission lines

The solar disk spectrum between 660 and 1175 Å (first order) obtained by SUMER on SOHO

Beam-foil lifetimes of highly ionized silicon

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