Multidimensional CMOS in-plane stress sensor

Bartholomeyczik, J.; Brugger, S.; Ruther, Patrick; Oliver, Paul

doi:10.1109/jsen.2005.853600

Cited by 59 publications

(14 citation statements)

References 22 publications

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“…14, it is seen that the shear stress linearly depends on the applied force in the measured stress interval and taking the results from Ref. 30 into account, we find that the inner blades may be misaligned at a larger angle than ⌬ = 0.07°. The actual misalignment angle can be measured by increasing the stress even further than what is seen in Fig.…”

Section: E Shear Stress Measurement and Discussionsupporting

confidence: 51%

“…A FEM of the shear stress in a chip placed in a 4PB fixture as a function of vertical misalignment of the outer blades is performed in Ref. 30. They report a linear relation between the applied force and shear stress until full contact between the vertically misaligned blades and chip is reached.…”

Section: E Shear Stress Measurement and Discussionmentioning

confidence: 99%

“…8,[15][16][17][18][19] In Refs. 16 and 18 an optical method is used to measure the deflection and curvature of the chip.…”

Section: Introductionmentioning

confidence: 99%

“…In Ref. 17, the displacement of the chip is known at the contact points between chip and 4PB fixture and this enables a calculation of the applied stress in the chip. Reference 8 and 15 use simple loads to apply the force and has no external measurement of the applied force.…”

Section: Introductionmentioning

confidence: 99%

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Four point bending setup for characterization of semiconductor piezoresistance

Richter

Arnoldus

Hansen

et al. 2008

Review of Scientific Instruments

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We present a four point bending setup suitable for high precision characterization of piezoresistance in semiconductors. The compact setup has a total size of 635cm3. Thermal stability is ensured by an aluminum housing wherein the actual four point bending fixture is located. The four point bending fixture is manufactured in polyetheretherketon and a dedicated silicon chip with embedded piezoresistors fits in the fixture. The fixture is actuated by a microstepper actuator and a high sensitivity force sensor measures the applied force on the fixture and chip. The setup includes heaters embedded in the housing and controlled by a thermocouple feedback loop to ensure characterization at different temperature settings. We present three-dimensional finite element modeling simulations of the fixture and discuss the possible contributions to the uncertainty of the piezoresistance characterization. As a proof of concept, we show measurements of the piezocoefficient π44 in p-type silicon at three different doping concentrations in the temperature range from T=30°CtoT=80°C. The extracted piezocoefficients are determined with an uncertainty of 1.8%.

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Section: E Shear Stress Measurement and Discussionsupporting

confidence: 51%

Section: E Shear Stress Measurement and Discussionmentioning

confidence: 99%

“…8,[15][16][17][18][19] In Refs. 16 and 18 an optical method is used to measure the deflection and curvature of the chip.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Four point bending setup for characterization of semiconductor piezoresistance

Richter

Arnoldus

Hansen

et al. 2008

Review of Scientific Instruments

View full text Add to dashboard Cite

show abstract

“…Especially the combination of different methods is a new and promising approach. The conjunction of simulation tools and experimental data for validation of the models was a successful step in the field of microelectronic packaging (Schwizer and al 2003;Suhling and Jaeger 2001;Bartholomeyczik et al 2005). In this paper a method is developed to transfer this success into the field of MEMS packages.…”

Section: Introductionmentioning

confidence: 99%

A silicon test chip for the thermomechanical analysis of MEMS packagings

2008

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This paper reports on a method for the investigation of mechanical stress on MEMS sensor and actuator structures due to packaging processes. A silicon test chip is developed and manufactured to validate the simulation results. Finite element analysis (FEA) is used to optimize the geometric parameters and to find a stress sensitive sensor geometry. A diaphragm structure is used as mechanical amplifier for bulk induced stresses during the packaging process. Piezo resistive solid state resistors are doped into the surface of the chip to measure the stress in the diaphragms and at the contact pads being most significant locations for analysis. A high precision ohmmeter was used to measure the resistance prior and past the packaging process. The captured data allows for computation of the resulting stress loads in magnitude. Therefore, a stress evaluation of different packaging technologies is conducted and the impact of the packaging process on reliability can be estimated immediately.

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Advanced silicon microstructures, sensors, and systems

Oliver

Gaspar

Ruther

2007

IEEJ Transactions Elec Engng

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This paper presents the progress in silicon-based biomedical microstructures, material characterization techniques, and mechanical microsystems by the authors' research team. Microneedle and microelectrode arrays with fluidic through-wafer vias and electrical contacts were developed. The structures are designed for dermatological and biological applications such as allergy testing, surface electromyography, and spatially resolved impedance spectroscopy. The characterization of thin films has relied on the bulge test. By the formulation of more powerful models, the application range of the bulge test was extended to elastically supported thin-film multilayers. This enables the mechanical properties of thin films to be determined reliably. Finally, progress in the operation and application of novel stress sensors based on CMOS diffusions and field effect transistors and exploiting the pseudo-Hall effect is reported. Their integration into powerful single-chip microsystems is described. Applications include stress mapping, force and torque measurements, and tactile surface probing of microcomponents. 

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Multidimensional CMOS in-plane stress sensor

Cited by 59 publications

References 22 publications

Four point bending setup for characterization of semiconductor piezoresistance

Four point bending setup for characterization of semiconductor piezoresistance

A silicon test chip for the thermomechanical analysis of MEMS packagings

Advanced silicon microstructures, sensors, and systems

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