In this paper useful physical objects called moments of the inverse scattering operator (MISO) of the Boltzmann equation (BE) are studied. The existence and uniqueness of the MISO is proven and a simple, generally valid, iterative scheme to actually compute those objects is given. The applications of the MISO extend from the computation of the solution for the space-homogeneous BE for small electric and magnetic fields to the exact computation of any transport parameter. This can be done for all moments of the space-inhomogeneous BE and for arbitrary electric and magnetic field intensities. The concept of MISO offers an elegant way to avoid the relaxation time approximation (RTA) every time it comes into play, not only theoretically but also in practical computations.

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This paper presents the results of a comparison among five Monte Carlo device simulators for nano-scale MOSFETs. The Monte Carlo models are applied to the simulation of the I-V characteristics of a 25 nm gate-length MOSFET representative of the highperformance transistor of the 65 nm technology node. Appreciable differences between the simulators are obtained in terms of simulated I ON . These differences are mainly related to different treatments of the ionized impurity scattering (IIS) and pinpoint a limitation of the available models for screening effects at very large carrier concentrations.

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