Multifunctional Dual Gated Coupling Device Using Van Der Waals Ferroelectric Heterostructure

Abstract

ultrasonic equipment and capacitors, [2] the Pb(Zr,Ti)O 3 systems are considered excellent piezoelectric material, [3,4] and the study of ferroelectricity in thin-film structures has been facilitated by the discovery of poly(vinylidene fluoridetrifluoroethylene). [5] In modern studies, ferroelectric materials are mainly applied in the development of ferroelectric non volatile memory (FeRAM), [6] negative capacitance field-effect transistors (NCFET), [7,8] and ferroelectric photodetectors [9] and biosensors. [10] Among these, FeRAM generally garners the most attention because of its fast programming and erasing speed (≈ns), low power consumption, and manufacturing compatibility. However, not all applications of ferroelectric materials have produced favorable results, silicon-based ferroelectric field-effect transistors have been lim-The ORCID identification number(s) for the author(s) of this article can be found under

Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory

“…By employing a dual gate structure, bilayer with a ferroelectric dielectric, or heterostructure configuration, the memory characteristics can be enhanced. [38,44,45] The mechanism that enables the implementation of memory characteristics can be explained by the OOP polarization switching of the In 2 Se 3 layer induced by an external electrical field. When using a relatively thick SiN x /SiO 2 dielectric of 65/50 nm, partial polarization near the front channel of the In 2 Se 3 layer can be induced.…”

An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In2Se3−xOx

“…26,27 The reported solution is usually coupling of an hexagonal boron nitride (hBN) layer with the ferroelectric material. 28,29 However, this solution results in a large EOT (ca. 1.3 nm corresponding to a four-layer hBN flake).…”

Constructing an Overall Static Negative Capacitance Effect via Energy Landscape Designing

“…The negative capacitance (NC) effect in ferroelectrics and antiferroelectrics is expected to reduce the power dissipation of transistors, [1][2][3][4] and promote the energy storage applications of supercapacitors. [5] In transistors, the NC effect can overcome the fundamental limit and reduce the subthreshold swing to lower than 60 mV dec −1 , [6][7][8][9] and realize ultra-thin ferroic gate stack in advanced transistors. [10] In supercapacitors, the NC effect can boost the energy storage density due to the capacitance enhancement, and enable the theoretical storage efficiency of 100% due to the hysteresis-free behavior between polarization and electric field.…”