2016
DOI: 10.1063/1.4955413
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Multifunctional epitaxial systems on silicon substrates

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Cited by 33 publications
(18 citation statements)
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“…The incorporation of spinel oxides as active materials in electronics will depend on their integration with silicon wafers having properties comparable to the CoFe 2 O 4 films grown on oxide single-crystal substrates. The use of controlled buffer layers, that minimize chemical interactions with the silicon substrate and induce domain matching epitaxy [22], is a requisite for this integration. In domain matching epitaxy the misfit between two layers is accommodated by a different number of planes of each layer with a low overall strain.…”
Section: Introductionmentioning
confidence: 99%
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“…The incorporation of spinel oxides as active materials in electronics will depend on their integration with silicon wafers having properties comparable to the CoFe 2 O 4 films grown on oxide single-crystal substrates. The use of controlled buffer layers, that minimize chemical interactions with the silicon substrate and induce domain matching epitaxy [22], is a requisite for this integration. In domain matching epitaxy the misfit between two layers is accommodated by a different number of planes of each layer with a low overall strain.…”
Section: Introductionmentioning
confidence: 99%
“…The epitaxial growth of TiN thin films on silicon substrates is well known on semiconductor devices for the fabrication of direct ohmic contacts as well as for diffusion barriers. TiN thin films have the advantage of showing metallic character, presenting good stability at high temperatures, are mechanically robust, and have been used as top and bottom electrodes for RAM capacitors [22]. However the ≈ 22 % lattice misfit between TiN and Si (001) forces some type of strain relaxation at their interface and the epitaxial growth is possible through domain matching epitaxy [30].…”
Section: Introductionmentioning
confidence: 99%
“…The misfits are defined as 1 = (|a 1 | À |b 1 |)/|b 1 |*100%, 2 = (|a 2 À b 2 |/|b 2 |)*100%, a 1 is the close-packed vector length in the surface unit cell of the first crystal, b 1 refers to the second one, a 2 and b 2 refer to the second pair of any vector in the first and the second phase, respectively. For the criterion of a maximal misfit value, a rather conservative value of 5% was chosen, while the results for 4 and 7% show good qualitative convergence within the range of a typical misfit value, when one can expect epitaxial single crystal growth (Singamaneni et al, 2016).…”
Section: Finding Interface Orsmentioning
confidence: 99%
“…However, to date, a very limited number of organic and organometallic MFs have been discovered and investigated; we have been responsible for all of the published results. These are MFs based on organometallic complexes, in which polarization occurs via proton transfer in (Me 2 NH 2 )─M─(HCO 2 ) 3 formiate complexes (where M is Mn, Co, or Ni) . Another example is a compound with the reversible shift of the oxygen atom between Mn or Co in binuclear Mn(II)─O─Mn(II) and Co(II)─O─Co(II) complexes; these exhibit the ME effect due to a change in the exchange and spin‐orbit interactions after the shift in the charge and spin densities .…”
Section: Introductionmentioning
confidence: 99%