Multifunctional high-performance van der Waals heterostructures

Abstract

A range of novel two-dimensional materials have been actively explored for More Moore and More-than-Moore device applications because of their ability to form van der Waals heterostructures with unique electronic properties. However, most of the reported electronic devices exhibit insufficient control of multifunctional operations. Here, we leverage the band-structure alignment properties of narrow-bandgap black phosphorus and large-bandgap molybdenum disulfide to realize vertical heterostructures with an ultrahigh rectifying ratio approaching 10 and on-off ratio up to 10. Furthermore, we design and fabricate tunable multivalue inverters, in which the output logic state and window of the mid-logic can be controlled by specific pairs of channel length and, most importantly, by the electric field, which shifts the band-structure alignment across the heterojunction. Finally, high gains over 150 are achieved in the inverters with optimized device geometries, showing great potential for future logic applications.

Black Phosphorus/Platinum Heterostructure: A Highly Efficient Photocatalyst for Solar‐Driven Chemical Reactions

“…[4][5][6] To fully utilize solar energy in chemical production, there are three goals for photocatalysts: robust harvesting of solar light spanning a broad spectrum, high charge separation and migration to the catalyst surface, and effective coupling of the photogenerated carrier into chemical reactions.Black phosphorus (BP), an emerging 2D semiconductor with a narrow bandgap and high charge carrier mobility, [7][8][9] has attracted a great deal of attention in electronics and optoelectronics. Solar-driven photocatalysis for chemical reactions can convert solar energy into the chemical bonds of the product molecules thus providing a promising approach to address the energy crisis.…”

Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure

“…In region I (V g < -2 V), the current is dominant by both nonoverlapped SnSeS channel region and SnSeS region in the heterojunction. [25] Owing to am-bipolar properties of BP, the current in region III results from both BP and SnSeS channels. This is because the heterostructure is fully turned on and the drain-source current is dominated by the nonoverlapped BP and SnSeS transistor, where current in depleted BP channel decreases more quickly than it increases in SnSeS.…”

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Graphene, transition metal-dichalcogenides (TMDs), and black phosphorus (BP) are widely exploited as building blocks for such vdWs heterostructure due to their unique electrical and optical properties. [14][15][16][17] In the past years, a host of BP-based vdWs heterostructures such as graphene/ BP, TMDs/BP, and h-BN/BP architecture, have been fabricated to explore their electronic and photoelectric properties, which have shown promising applications for fieldeffect transistors (FETs), [18][19][20] photodetectors, [8,21,22] flexible devices, [23] memory device, [24] logic circuits, [25] and so on. [14][15][16][17] In the past years, a host of BP-based vdWs heterostructures such as graphene/ BP, TMDs/BP, and h-BN/BP architecture, have been fabricated to explore their electronic and photoelectric properties, which have shown promising applications for fieldeffect transistors (FETs), [18][19][20] photodetectors, [8,21,22] flexible devices, [23] memory device, [24] logic circuits, [25] and so on.

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“…[8][9][10][11][12][13] Among these 2D materials, BP has attracted extensive attention because of its high carrier mobility (up to 1000 cm 2 V −1 s −1 at room temperature), moderate tunable direct bandgap on thickness (from 0.3 eV for bulk to 2.0 eV for monolayer), and intrinsic anisotropy arising from the puckered structure. In the most studied BP/MoS 2 heterostructure, [11,20,25] diverse diode characteristics, including back forward rectifying diode, Zener diode, and forward rectifying diode, have been obtained by BP thickness modulation. In the most studied BP/MoS 2 heterostructure, [11,20,25] diverse diode characteristics, including back forward rectifying diode, Zener diode, and forward rectifying diode, have been obtained by BP thickness modulation.…”

“…In the most studied BP/MoS 2 heterostructure, [11,20,25] diverse diode characteristics, including back forward rectifying diode, Zener diode, and forward rectifying diode, have been obtained by BP thickness modulation. [25] Recently, tin-based dichalcogenide SnSe x S 1−x , [26][27][28][29][30][31][32] a layered semiconductor family with environmental friendly and low cost characteristics, has been explored for nanoelectronic applications. [25] Recently, tin-based dichalcogenide SnSe x S 1−x , [26][27][28][29][30][31][32] a layered semiconductor family with environmental friendly and low cost characteristics, has been explored for nanoelectronic applications.…”