Multilayer Black Phosphorus Near-Infrared Photodetectors

Abstract

Black phosphorus (BP), owing to its distinguished properties, has become one of the most competitive candidates for photodetectors. However, there has been little attention paid on photo-response performance of multilayer BP nanoflakes with large layer thickness. In fact, multilayer BP nanoflakes with large layer thickness have greater potential from the fabrication viewpoint as well as due to the physical properties than single or few layer ones. In this report, the thickness-dependence of the intrinsic property of BP photodetectors in the dark was initially investigated. Then the photo-response performance (including responsivity, photo-gain, photo-switching time, noise equivalent power, and specific detectivity) of BP photodetectors with relative thicker thickness was explored under a near-infrared laser beam (λIR = 830 nm). Our experimental results reveal the impact of BP’s thickness on the current intensity of the channel and show degenerated p-type BP is beneficial for larger current intensity. More importantly, the photo-response of our thicker BP photodetectors exhibited a larger responsivity up to 2.42 A/W than the few-layer ones and a fast response photo-switching speed (response time is ~2.5 ms) comparable to thinner BP nanoflakes was obtained, indicating BP nanoflakes with larger layer thickness are also promising for application for ultra-fast and ultra-high near-infrared photodetectors.

Abnormal Near‐Infrared Absorption in 2D Black Phosphorus Induced by Ag Nanoclusters Surface Functionalization

“…Further protection can be achieved using a high‐transmission hydrophobic layer to prevent the water moisture to penetrate into the BP surface, and hence to largely suppress the water‐catalyzed oxidation, as reported in previous literatures . We also compare the NIR optoelectronic performance of our device with previously reported BP photodetectors . As shown in Table S3 in the Supporting Information, our device features a very high responsivity of ≈7.21 (50.63 A W −1 ) at 808 (730) nm due to the largely enhanced NIR absorption.…”

Integration of multi-layer black phosphorus into photoconductive antennas for THz emission

“…To provide a comparison with the large experimental literature concerning BP photodetectors, 19,[49][50][51][52][53][54][55][56][57][58] we also compute the responsivity of this device as a function of average power at V b = 100 mV, as shown in Fig. 3(d).…”

Current Tunneling Characterization of Oxidized Black Phosphorus by Graphite Thin Film Electrodes

“…1(d). This two-dimensional material stacking process was performed using a micro-transferring system with polydimethylsiloxane (PDMS) stamping [14,19,20]. The TG and the BG were then contacted using Cr/Au (10 nm / 100 nm) electrodes via normal e-beam lithography [see Fig.…”