Multilayer graphene synthesized using magnetron sputtering for planar supercapacitor application

Abstract

This study reports the direct preparation of graphene-based films using magnetron sputtering of graphite target. The nanomaterial was deposited at a low temperature of 620 °C on silicon wafers and on metallic foils including aluminum. The films were used in fabrication of supercapacitors with a planar geometry. Electrochemical characterizations demonstrated that the films produced showed nearly ideal electrical capacitive behavior. The maximum capacitance obtained from cyclic voltammetry analysis was 325 F/g for a scan rate of 1 mV/s. The device is capable of delivering an energy density of 13.9 Wh/kg at a very high power density of 50 000 W/kg for ultrafast scan rate of 1000 mV/s. The graphene nanomaterial electrode retains the electrochemical stability over a large number of charge-discharge cycles.

Enhanced Performance of WO3 Photodetectors Through Hybrid Graphene-Layer Integration

“…For the deposition of WO 3 films, a tungsten (W) metal target with a purity of 99.99% (2.00″ Dia × 0.125″ Thick, Kurt J. Lesker Company) was used as a source material under 99.99% of purity of argon (sputter gas) and oxygen (reactive gas) atmosphere conditions. Similarly, for the deposition of GR films, a pure graphite (carbon) target (2.00″ Dia × 0.125″ Thick, Kurt J. Lesker Company) was used as a source material in the sputter gas of the pure argon environment . Before each deposition, the deposition chamber was evacuated to a base pressure of <4 × 10 –7 Torr.…”

Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition

“…Conversely, there are a few reports on the vapor-phase crystallization of MLG using the sputtering method, whereas the vapor-phase crystallization is generally more advantageous for lowering the synthesis temperature than solid-phase crystallization. 23 In this study, we explored the possibility of low-temperature vapor-phase synthesis of MLG by sputtering with metal catalysis. The metals with high carbon solid solubility allowed MLG synthesis at 400 °C.…”

“…Metal-induced solid-phase crystallization of sputtered amorphous carbon (a-C) films, , particularly via layer exchange, − is useful for fabricating thick MLG films on arbitrary substrates. Conversely, there are a few reports on the vapor-phase crystallization of MLG using the sputtering method, whereas the vapor-phase crystallization is generally more advantageous for lowering the synthesis temperature than solid-phase crystallization . In this study, we explored the possibility of low-temperature vapor-phase synthesis of MLG by sputtering with metal catalysis.…”

Pulsed-Plasma Physical Vapor Deposition Approach Toward the Facile Synthesis of Multilayer and Monolayer Graphene for Anticoagulation Applications

“…Physical vapor deposition (PVD) is a scarcely explored technique for the deposition of graphene. There have been a few reports on the use of cathode arc deposition and radio frequency (RF) sputtering for the synthesis of few-layer graphene (FLG). − However, there appear to be no reports on the utilization of pulsed DC magnetron sputtering (PMS) for the controlled growth of graphene films from a single layer to a few layers. The PMS technique has been developed by combining the benefits of both DC and RF magnetron sputtering.…”