Multilayer Reflective Coatings for BEUV Lithography: A Review

Abstract

The development of microelectronics is always driven by reducing transistor size and increasing integration, from the initial micron-scale to the current few nanometers. The photolithography technique for manufacturing the transistor needs to reduce the wavelength of the optical wave, from ultraviolet to the extreme ultraviolet radiation. One approach toward decreasing the working wavelength is using lithography based on beyond extreme ultraviolet radiation (BEUV) with a wavelength around 7 nm. The BEUV lithography relies on advanced reflective optics such as periodic multilayer film X-ray mirrors (PMMs). PMMs are artificial Bragg crystals having alternate layers of “light” and “heavy” materials. The periodicity of such a structure is relatively half of the working wavelength. Because a BEUV lithographical system contains at least 10 mirrors, the optics’ reflectivity becomes a crucial point. The increasing of a single mirror’s reflectivity by 10% will increase the system’s overall throughput six-fold. In this work, the properties and development status of PMMs, particularly for BEUV lithography, were reviewed to gain a better understanding of their advantages and limitations. Emphasis was given to materials, design concepts, structure, deposition method, and optical characteristics of these coatings.

Depth-resolved oxidational studies of Be/Al periodic multilayers investigated by X-ray photoelectron spectroscopy

“…There are numerous reasons, mainly associated with the interfacial properties of periodic structures which effect the reflectivity of mirrors, and these aspects are widely investigated in the existing literature. 7–13 The reflectivity of mirrors is also affected by the surface oxidation. 14–16 However, the investigation of surface and subsurface oxidation depending upon the thickness of the layers has not yet been extensively studied using surface sensitive methods.…”

Evaluation of the X-ray/EUV Nanolithography Facility at AS through wavefront propagation simulations

“…To keep up with the demands of device scaling predicted by Moore's law, a future transition to 6.7 nm wavelength (185 eV) sources is anticipated. The availability of laser-pulsed plasma light sources (Otsuka et al, 2012) and multilayer optics (Uzoma et al, 2021) at this wavelength make it a particularly promising candidate for future lithography. A shift to shorter wavelengths brings with it significant challenges, including an increased significance of stochastic effects for higher resolution patterning (De Bisschop, 2017), and a need for understanding the wavelengthdependent effects of mask defects (Goldberg & Mochi, 2010).…”

Carbon/boron multilayer for beyond EUV lithography

“…There were some reports for the stability with the model structure of La and B layers. 5,6 However, few reports have been reported about the stability of the actual La/B multilayer. It is difficult to achieve high temporal stability in La/B-based multilayers because of the high chemical activity of La.…”