Multilevel monolithic inductors in silicon technology

Soyuer, M.; Burghartz, Joachim N.; Jenkins, K.A.; Ponnapalli, S.; Ewen, J.F.; Pence, W.E.

doi:10.1049/el:19950241

Cited by 76 publications

(23 citation statements)

References 4 publications

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“…High-frequency Qs, however, were observed with unexpected lower Q max s due to lower self-resonant frequencies. These results are at variance with those reported in [6,13], which showed higher Q max than that of normal inductors, implying that multilevel metalization improves the Q of inductors at higher frequencies as well. The lower Q max s in our Q-enhanced inductors can be explained as follows:…”

Section: L-and Q-enhanced Inductorscontrasting

confidence: 97%

See 1 more Smart Citation

Micromachined RF passive components and their applications in MMICs

Sun¹,

Tauritz

Baets³

1999

Int J RF and Microwave Comp Aid Eng

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Section: L-and Q-enhanced Inductorscontrasting

confidence: 97%

“…If the space S between two adjacent spirals is large (e.g., S = 10 µm in [6,13]), the coupling capacitances exhibit a relatively weak influence on Q max . In this case, a higher Q max is observed for the Q-enhanced inductor than for the normal inductor.…”

Section: L-and Q-enhanced Inductorsmentioning

confidence: 99%

Micromachined RF passive components and their applications in MMICs

Sun¹,

Tauritz

Baets³

1999

Int J RF and Microwave Comp Aid Eng

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“…Adhering to conventional processing, one can for instance take advantage of the available multilevel interconnects. Several metal layers can be shunted together to achieve an effectively thicker metal in the spiral coil [21]- [24]. Other ways to reduce are to make the aluminum top metal layer thicker [25], [26] or to switch in addition to copper [27], [28] or gold [29] metallization.…”

Section: Optimization Guidelinesmentioning

confidence: 99%

“…Consequently, a thicker metal is necessary to overcome this dilemma. Shunting several metal layers in a multilevel interconnect technology together has been mentioned in Section III-C as a simple technique to provide an effectively thicker conductor without changing the process technology [21]- [24]. Shunting of metal layers, however, comes at the expense of a reduced oxide thickness between coil and substrate ( in Fig.…”

Section: B Metal Layer Shuntingmentioning

confidence: 99%

On the design of RF spiral inductors on silicon

Burghartz

Rejaei

2003

IEEE Trans. Electron Devices

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256

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Abstract-This review of design principles for implementation of a spiral inductor in a silicon integrated circuit fabrication process summarizes prior art in this field. In addition, a fast and physics-based inductor model is exploited to put the results contributed by many different groups in various technologies and achieved over the past eight years into perspective. Inductors are compared not only by their maximum quality factors ( max ), but also by taking the frequency at max , the inductance value ( ), the self-resonance frequency ( SR ), and the coil area into account.It is further explained that the spiral coil structure on a lossy silicon substrate can operate in three different modes, depending at first order on the silicon doping concentration. Ranging from high to low substrate resistivity, inductor-mode, resonator-mode, and eddy-current regimes are defined by characteristic changes of max , , and SR . The advantages and disadvantages of patterned or blanket resistive ground shields between the inductor coil and substrate and the effect of a substrate contact on the inductor are also addressed in this paper. Exploring optimum inductor designs under various constraints leverages the speed of the model. Finally, in view of the continuously increasing operating frequencies in advancing to new generations of RF systems, the range of feasible inductance values for given quality factors are predicted on the basis of optimum technological features.

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“…Many results have been reported to improve the performance of on-chip inductors. However, most researches are focused on 2-D spiraltype microinductors [1][2][3][4], because the fabrication process of 2-D spiral inductors is easy and it is a great challenge to fabricate high performance 3-D inductors for high frequency applications. In recent years, some good performance 3-D air-core and magnetic core solenoid inductors were made [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Surface micromachined high-performance RF MEMS inductors

et al. 2006

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High-performance three-dimensional (3-D) microinductors with air-core and polyimide-core were fabricated by using simple MEMS technology. Both inductors have electroplated copper coils to minimize resistance to obtain high quality factor. The measurement results show that both inductors have high Q-factors over wide range of operating frequency. The maximum Q-factor of the polyimide-core is 36.5 and the inductance is 1.42 nH at 4.5 GHz, while the maximum Q-factor of the air-core inductor is 22.9 and the inductance is 1.17 nH at 5.5 GHz. The series resistance/parasitic capacitance of the polyimide-core inductor and air-core inductor is 1.05 W/1.07 pF and 1.82 W/0.57 pF respectively at the peak-Q frequency.

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Multilevel monolithic inductors in silicon technology

Cited by 76 publications

References 4 publications

Micromachined RF passive components and their applications in MMICs

Micromachined RF passive components and their applications in MMICs

On the design of RF spiral inductors on silicon

Surface micromachined high-performance RF MEMS inductors

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