Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film

Lee, Kyung Jae; Han, Kyoul; Lee, Sanghoon; Liu, Xinyu; Dobrowolska, M.; Furdyna, J. K.

doi:10.1063/9.0000523

AIP Advances

2023

DOI: 10.1063/9.0000523

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Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film

Kyung Jae Lee

Kyoul Han

Sanghoon Lee

et al.

Abstract: We have studied spin-orbit torque (SOT) magnetization switching in a (Ga,Mn)(As,P) film with vertically-graded magnetic anisotropy. The magnetization switching chirality during current scans reveals that strain-induced Dresselhaus-type spin-orbit field does the major role for spin polarization of carriers causing SOT in the system. The volume fraction of SOT magnetization switching significantly depends on the magnitude and direction of the applied bias field. This feature leads to the realization of stable mu… Show more

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2024

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Cited by 3 publications

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Depolarization effects on spin-orbit torque magnetization switching in (Ga,Mn)(As,P) ferromagnetic semiconductor film

Jana,

Lee,

Lee

et al. 2024

Applied Physics Letters

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Our study of magnetization switching in crystalline (Ga,Mn)(As,P) ferromagnetic semiconductor (FMS) film by spin-orbit torque (SOT) has revealed an unexpected increase in critical switching current as the in-plane magnetic bias field is increased beyond a certain point. This intriguing behavior is ascribed to depolarization of spin-polarized current induced by the application of bias field perpendicular to the direction of current carrier spins. This is particularly interesting, because the bias field is itself a necessary requirement for achieving the deterministic SOT magnetization switching. To gain understanding of this unexpected behavior, we incorporated the process of spin depolarization into micromagnetic simulation study of SOT magnetization switching in the (Ga,Mn)(As,P) system. Through simulations that include effects of spin depolarization, we were able to replicate the observed increase in the required critical switching current as the in-plane bias field is increased. Furthermore, our study demonstrates that the dependence of critical switching current on bias field can be quantitatively described by adjusting magnetic anisotropy parameters of the film. This study not only enhances our understanding of SOT phenomena but also offers valuable insights for tailoring and optimizing FMS materials for spintronic applications.

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Depolarization effects on spin-orbit torque magnetization switching in (Ga,Mn)(As,P) ferromagnetic semiconductor film

Jana,

Lee,

Lee

et al. 2024

Applied Physics Letters

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Observation of field-free spin–orbit torque switching in a single crystalline (Ga,Mn)(As,P) ferromagnetic film with perpendicular anisotropy

Lee,

Liu

et al. 2024

APL Materials

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We report the observation of field-free spin–orbit torque (SOT) magnetization switching in a single layer of (Ga,Mn)(As,P) ferromagnetic film exhibiting perpendicular magnetic anisotropy. The SOT switching phenomenon is characterized by distinct transitions between two Hall resistance (HR) states during current scans. When subjected to an in-plane bias field, the observed switching chirality in the HR hysteresis loop consistently aligns with SOT induced by spin polarization arising from Rashba- and Dresselhaus-type spin–orbit fields within the tensile-strained crystalline structure of the (Ga,Mn)(As,P) film. Remarkably, in the present experiments, we observe SOT switching even in the absence of an external bias field, and with its chirality depending on the direction of initial magnetization. We attribute this field-free switching to symmetry breaking facilitated by an internal coupling field, the orientation of which is determined by the external field experienced as the magnetization is initialized. Further evidence supporting the presence of such a coupling field includes a shift in the field-scan HR hysteresis depending on the direction of initialized magnetization. Structural analysis reveals a surface layer enriched in Mn and O, indicating the presence of oxide-based magnetic structures that are magnetically coupled to the (Ga,Mn)(As,P) film. The temperature dependence of field-free SOT switching corroborates this explanation, as the internal coupling field disappears above 40 K, consistent with the expected magnetic transition of the Mn3O4 structure. Our discovery of field-free SOT magnetization switching in a single-layer film represents a significant advancement, offering a novel pathway for the development of simpler and more energy-efficient spintronic devices.

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Magnetization switching by spin-orbit torque in crystalline (Ga,Mn)(As,P) film deposited on a vicinal GaAs substrate

Jana,

Lee,

Lee

et al. 2024

Phys. Rev. B

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Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film

Cited by 3 publications

References 28 publications

Depolarization effects on spin-orbit torque magnetization switching in (Ga,Mn)(As,P) ferromagnetic semiconductor film

Depolarization effects on spin-orbit torque magnetization switching in (Ga,Mn)(As,P) ferromagnetic semiconductor film

Observation of field-free spin–orbit torque switching in a single crystalline (Ga,Mn)(As,P) ferromagnetic film with perpendicular anisotropy

Magnetization switching by spin-orbit torque in crystalline (Ga,Mn)(As,P) film deposited on a vicinal GaAs substrate

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