Multimode switching induced by a transverse field in planar magnetic nanowires

Bryan, Matthew T.; Atkinson, D.; Allwood, D. A.

doi:10.1063/1.2162263

Cited by 18 publications

(21 citation statements)

References 17 publications

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“…This behavior is consistent with symmetry breaking of the pinning energy states at the pad-wire interface of the domain walls that depends upon the direction of the domain wall magnetization in the presence of the transverse field. 10 The primary interest here is the influence that the wall magnetization direction has upon the interaction between the wall and the asymmetrical pinning structure, in this case, a triangular notch. Figure 2 shows magnetization switching behavior measured with the MOKE laser spot located after the notch and therefore shows the switching behavior resulting from depinning of domain wall from the notch.…”

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confidence: 99%

Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept

Atkinson

Eastwood

Bogart

2008

Applied Physics Letters

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122

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confidence: 99%

Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept

Atkinson

Eastwood

Bogart

2008

Applied Physics Letters

Self Cite

122

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“…Different techniques have been utilized to fabricate these structures, but electrodeposition has been proved to be simple, fast and a low cost technique, as well as using this technique, it is possible to produce different materials and multilayer as: thin films, nanowires or nanotubes [5,8,11,12,14,18,31].…”

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confidence: 99%

Surface Morphology and Magnetic Properties of Isolated Cylindrical Nickel Nanowires

Sultan¹

2017

AJN

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Abstract:In this article, the surface morphology and magnetic properties of isolated cylindrical nickel (Ni) nanowires fabricated by electrodeposition have been thoroughly investigated using scanning electron microscopy and Magneto-Optical Kerr Effect (MOKE) magnetometry, respectively. The surfaces of most nanowires were found to be homogenous, uniform, and cylindrical in shape. Some others show different diameters and surface features, including; protrusions and branches along their length. The diameter distribution of a wide range of nanowires was found to differ from their template pore diameters. These all variations are more likely due to defects exist in the internal surfaces of the pores within the template itself, or may be associated with the trapped air pockets within the pores during nanowires growth or due to the oxide formation or residual contaminants which may cover these wires. The nanowires lengths were found to differ from their actual lengths estimated during deposition growth. This was attributed to the breakage of nanowires into small sections during releasing process. The hysteresis loops obtained by applying a magnetic field at different angles with respect to the nanowires long axis showed square hysteresis loops with a sharp jump of Kerr signal during switching behaviour, as well as a high squareness ratio, indicating the dominance of shape anisotropy. These results are quite different from the measurements of high density templated nanowires reported in the literature, due to the small number of nearest neighbour nanowires, and hence no magneto-static interaction. The magnetisation reversal of such wires is well described by the non-uniform rotation of the curling model of domain reversal.

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“…Both of these devices use 2-D wire circuits and therefore require the use of orthogonal in-plane magnetic fields to drive domain walls through wires of different orientations. These biaxial fields can significantly alter the fields at which domain wall injection occurs, control the number of injection modes that exist with attached wires of various widths [16], and influence the domain wall chirality [17], [18]. Multimodal behavior, observed in single-shot hysteresis loops as a stochastic variation of axial injection fields between particular values, only occurred below a critical transverse field.…”

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Transverse Field-Induced Nucleation Pad Switching Modes During Domain Wall Injection

et al. 2010

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Article:Bryan, M.T., Fry, P.W., Schrefl, T. et ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request.

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Multimode switching induced by a transverse field in planar magnetic nanowires

Cited by 18 publications

References 17 publications

Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept

Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept

Surface Morphology and Magnetic Properties of Isolated Cylindrical Nickel Nanowires

Transverse Field-Induced Nucleation Pad Switching Modes During Domain Wall Injection

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