Multipair-free source of entangled photons in the solid state

Neuwirth, Julia; Basset, Francesco Basso; Rota, Michele B.; Hartel, Jan-Gabriel; Sartison, Marc; Silva, Saimon Filipe Covre da; Jöns, Klaus D.; Rastelli, Armando; Trotta, Rinaldo

doi:10.1103/physrevb.106.l241402

Cited by 7 publications

(7 citation statements)

References 48 publications

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“…Having confirmed the coherent population of the XX-X cascade via TPE by observing Rabi rotations in Figure 2a,b, revealing a fidelity for preparing the XX-(X-) state of 82(4)% (81(4)%), we applied another independent method for extracting the preparation fidelity to verify our results. For this purpose, photon cross-correlation experiments between photons emitted from the XX-and X-state were carried out 44 (see Methods and SI, section IIA for details). Figure 3a depicts the photon cross-correlation histogram recorded at π-pulse excitation (black circles) together with a Monte Carlo simulation (orange line) accounting for our experimental conditions (including setup imperfections).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…The second approach, used in Figure b, is based on photon cross-correlation experiments between photons emitted from the XX- and X-state . Comparing the integrated coincidences originating from the same cascade A same with those from different cascades A different , the preparation fidelity can in principle be extracted as scriptF normalprep = A normaldifferent / A normalsame .…”

Section: Methodsmentioning

confidence: 99%

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On-Demand Generation of Indistinguishable Photons in the Telecom C-Band Using Quantum Dot Devices

Vajner,

Holewa,

Zięba-Ostój

et al. 2024

ACS Photonics

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Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, which are useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550 nm is ideal. The direct generation of QD-photons in this spectral range with high quantumoptical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QDmesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton−exciton radiative cascade, we observe Rabi rotations up to pulse areas of 4π and a high single-photon purity in terms of g (2) (0) = 0.005(1) and 0.015(1) for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the π-pulse exceeding 80%. Finally, performing Hong−Ou−Mandel-type two-photon interference experiments, we obtain a photon-indistinguishability of the full photon wave packet of up to 35(3)%, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

On-Demand Generation of Indistinguishable Photons in the Telecom C-Band Using Quantum Dot Devices

Vajner,

Holewa,

Zięba-Ostój

et al. 2024

ACS Photonics

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“…[5,6] Additionally DOI: 10.1002/qute.202300242 integrated silicon photonic components can be used at low loss with this wavelength. [7] High single-photon emission probabilities [8] and indistinguishability [9][10][11] have been demonstrated with InAs QDs grown on GaAs. Unfortunately, this material platform is typically limited to wavelengths below 1300 nm, [12] with the exception of the exploitation of strain-relaxing layers like metamorphic buffers.…”

Section: Introductionmentioning

confidence: 97%

Purcell‐Enhanced Single‐Photon Emission in the Telecom C‐Band

Kaupp,

Reum,

Kohr

et al. 2023

Adv Quantum Tech

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Purcell‐enhanced quantum dot single‐photon emission in the telecom C‐band from InAs quantum dots inside circular Bragg grating cavities is shown. The InAs quantum dots are grown by means of molecular beam epitaxy on an InP substrate and are embedded into a quaternary In0.53Al0.23Ga0.24As membrane structure. In a post‐growth flip‐chip process with subsequent substrate removal and electron beam‐lithography, circular Bragg grating (“bullseye”) resonators are defined. Micro‐photoluminescence studies of the devices at cryogenic temperatures of K reveal individual quantum dot emission lines into a pronounced cavity mode. Time‐correlated single‐photon counting measurements under above‐band gap excitation yield Purcell‐enhanced excitonic decay times of ps corresponding to a Purcell factor of . Pronounced photon antibunching with a background limited is observed, which demonstrates that the light originated mostly from one single quantum dot.

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“…Semiconductor quantum dots (QDs) have emerged as outstanding sources of single photons [1,2] and photon pairs [3,4], allowing for high brightness and ultra-low multi-photon emission probability [5,6] for potential applications in quantum communication and information processing. Most of the proofs of principle demonstrations in these areas have relied on In(Ga)As QDs obtained via the Stranski-Krastanow (SK) epitaxial growth [7] on GaAs substrates.…”

mentioning

confidence: 99%

“…The value of S remains constant. By indicating with k the fraction of events with no more than one photon pair per excitation cycle, we account for the multi-photon emission probability 1 − k as in [6]:…”

mentioning

confidence: 99%