Multiphysics characterization of polymer‐filled through‐silicon vias (PF‐TSVs) for three‐dimensional integration

Abstract

To increase the density of input/output connections, the polymer-filled through-silicon vias (PF-TSVs) were proposed recently. To analyze the reliability of the PF-TSVs, multiphysics characterization is conducted in this paper. The time-domain finite-element method is used to cosolve the heat conduction and thermal stress equations. Temperature-dependent materials' parameters such as thermal conductivity, coefficient of thermal expansion, and Young's modulus, are treated appropriately. Based on the in-house developed timedomain finite-element method algorithm, the temperature and thermal stress distributions of the PF-TSV array and channel are evaluated. Transient thermo-mechanical responses are captured and studied in detail for the PF-TSV array and channel with different periodic voltage pulses applied. It is anticipated that this study provides certain guidance for the design and applications of PF-TSVs.