2012
DOI: 10.1587/transele.e95.c.1675
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Multiple-Bit-Upset and Single-Bit-Upset Resilient 8T SRAM Bitcell Layout with Divided Wordline Structure

Abstract: This paper presents a new 8T (8-transistor) SRAM cell layout mitigating multiple-bit upset (MBU) in a divided wordline structure. Because bitlines along unselected columns are not activated, the divided wordline structure eliminates a half-select problem and achieves lowpower operation, which is often preferred for low-power/low-voltage applications. However, the conventional 8T SRAM with the divided wordline structure engenders MBUs because all bits in the same word are physically adjoining. Consequently, it … Show more

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Cited by 3 publications
(2 citation statements)
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“…Furthermore, the ECCs suggested in these approaches only focuses on a single bit-flip correction (as design bounded by power consumption). However, the studies show that transient bit-flips often lead to multiple bit errors that cannot be corrected by a single-bit correcting ECC [Yoshimoto et al 2011]. …”
Section: Hw-onlymentioning
confidence: 99%
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“…Furthermore, the ECCs suggested in these approaches only focuses on a single bit-flip correction (as design bounded by power consumption). However, the studies show that transient bit-flips often lead to multiple bit errors that cannot be corrected by a single-bit correcting ECC [Yoshimoto et al 2011]. …”
Section: Hw-onlymentioning
confidence: 99%
“…ARRA targets Single Bit Upset (SBU) as well as Multiple Bit Upsets (MBUs) [Yoshimoto et al 2011] as the soft error models. SBU refers to a single bit-flip in a register word.…”
Section: Error Modelmentioning
confidence: 99%