Multiple-Cell Upsets Induced by Single High-Energy Electrons

Gadlage, Matthew J.; Roach, A.; Duncan, Adam R.; Williams, Aaron M.; Bossev, Dobrin P.; Kay, Matthew

doi:10.1109/tns.2017.2756441

Cited by 21 publications

(11 citation statements)

References 14 publications

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“…It is also interesting to investigate what happens when the internal structure of the SRAM is unknown, so the number of multiple events has to be estimated by using statistical deviations [3]- [6]. The MBU number can be corrected with Eqs.…”

Section: Discussionmentioning

confidence: 99%

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Influence of Randomness During the Interpretation of Results From Single-Event Experiments on SRAMs

Franco

Clemente

Mecha

et al. 2019

IEEE Trans. Device Mater. Relib.

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After having carried out radiation experiments on memories, the detected bitflips must be classified into single bit upsets and multiple events to calculate the cross sections of different phenomena. There are some accepted procedures to determine if two bitflips are related. However, if there are enough bitflips, it is possible that unrelated pairs of errors appear in nearby cells and they are erroneously taken as a multiple event. In this paper, radiation experiments are studied as a special case of the urn-and-balls problem in probability theory to estimate how the measured multiple-event cross sections must be corrected to remove the overestimation due to the false events.

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Section: Discussionmentioning

confidence: 99%

“…However, it has become evident that bitflips can compromise the success of space missions. For example, it was recently discovered that even electrons can produce bitflips in SRAMs [2], [3].…”

Section: Introductionmentioning

confidence: 99%

Influence of Randomness During the Interpretation of Results From Single-Event Experiments on SRAMs

Franco

Clemente

Mecha

et al. 2019

IEEE Trans. Device Mater. Relib.

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“…Last column of Table IV shows the burst error the different ECCs, a concern to have into applications [9], [10]. As shown in [9], provoke 2-bit adjacent errors in earth observation although a nonnegligible percentage of longer burst also presented.…”

Section: B Our Approachmentioning

confidence: 99%

“…IV shows the burst error coverage of into account in space applications [9], [10]. As shown in [9], MCUs mainly observation satellites; although a nonnegligible percentage of longer burst errors are also presented.…”

Section: International Conference On New Scientific Creations In Engimentioning

confidence: 99%

Recovering Multiple Cell Upsets Using Low Power Error Correction Codes in Memory Applications

Saran¹

2019

IJRTER

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Currently, faults suffered by SRAM memory systems have increased due to the aggressive CMOS integration density. Thus, the probability of occurrence of single (SCUs) or multiple-cell upsets (MCUs) augments. One of the main causes of MCUs in space applications is cosmic radiation. A common solution is the use of error correction codes (ECCs). Nevertheless, when using ECCs in space applications, they must achieve a good balance between error coverage and redundancy, and their encoding/decoding circuits must be efficient in terms of area, power, and delay. Different codes have tolerate MCUs. For instance, Matrix codes use Hamming codes and parity checks in a bi-dimensional layout to correct and detect some patterns of MCUs. Recently presented, column (CLC) has been designed to tolerate MCUs in space applications. CLC is a modified Matrix code, based on extended Hamming codes and parity checks. Nevertheless, a common property of these codes is the high redundancy introduce present a series of new low-redundant ECCs able to correct MCUs with reduced area, power, and delay overheads. Also, these new codes maintain, or even improve, memory error coverage with respect to Matrix and CLC codes.

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“…Last column of TABLE IV shows the burst error coverage of the different ECCs, a concern to have into account in space applications [9] [10]. As shown in [9], MCUs mainly provoke 2-bit adjacent errors in earth observation satellites; although a non negligible percentage of longer burst errors are also presented.…”

Section: C0 ••••••••••••••••••••C7 X0 X1 ••••••••••••••••••••••••••••mentioning

confidence: 99%

Improving Error Correction Codes for Multiple-Cell Upsets in Space Applications

Gracia-Morán

Saiz-Adalid

Gil-Tomás

et al. 2018

IEEE Trans. VLSI Syst.

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Currently, faults suffered by SRAM memory systems have increased due to the aggressive CMOS integration density. Thus, the probability of occurrence of Single Cell Upsets (SCUs) or Multiple Cell Upsets (MCUs) augments. One of the main causes of MCUs in space applications are cosmic radiation. A common solution is the use of Error Correction Codes (ECCs). Nevertheless, when using ECCs in space applications, they must achieve a good balance between error coverage and redundancy, and their encoding/decoding circuits must be efficient in terms of area, power and delay. Different codes have been proposed to tolerate MCUs. For instance, Matrix codes use Hamming codes and parity checks in a bi-dimensional layout to correct and detect some patterns of MCUs. Recently presented, Column-Line-Code (CLC) has been designed to tolerate MCUs in space applications. CLC is a modified Matrix code, based on extended Hamming codes and parity checks. Nevertheless, a common property of these codes is the high redundancy introduced. In this work, we present a series of new low-redundant ECCs able to correct MCUs with reduced area, power and delay overheads. Also, these new codes maintain, or even improve, memory error coverage with respect to Matrix and CLC codes.

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Multiple-Cell Upsets Induced by Single High-Energy Electrons

Cited by 21 publications

References 14 publications

Influence of Randomness During the Interpretation of Results From Single-Event Experiments on SRAMs

Influence of Randomness During the Interpretation of Results From Single-Event Experiments on SRAMs

Recovering Multiple Cell Upsets Using Low Power Error Correction Codes in Memory Applications

Improving Error Correction Codes for Multiple-Cell Upsets in Space Applications

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