Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Jiang, Rong; Shen, Xiao; Fang, Jingtian; Wang, Pan; Zhang, En Xia; Chen, Jin; Fleetwood, D.M.; Schrimpf, R.D.; Kaun, Stephen W.; Kyle, Erin C. H.; Speck, James S.; Pantelides, Sokrates T.

doi:10.1109/tdmr.2018.2847338

Cited by 55 publications

(24 citation statements)

References 46 publications

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“…Here we note that two distinct peaks in an I D transient spectrum can also be caused by two rate limiting conduction pathways from a single trap [40]. Given the apparent coupling and lack of straightforwardly extractable time constants, it is not possible to attribute the defects to those listed in papers such as [26], [32].…”

Section: Discussionmentioning

confidence: 94%

“…flicker (1/f) noise [29] due to carrier number fluctuations. Application of the Dutta-Horn model [30] to 1/f noise in GaN has been used to estimate the defect energy distributions in GaN devices [31], [32]. The slow traps responsible for these effects could be located in the passivation, or on the surface forming a virtual gate, or in the AlGaN barrier.…”

Section: Current Transient Spectroscopymentioning

confidence: 99%

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Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Butler

Uren

Lambert

et al. 2018

IEEE Trans. Nucl. Sci.

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Current transient spectroscopy (CTS), was used to measure the impact of neutron irradiation on output currentlimiting charge traps in AlGaN/GaN HEMTs with time constants from 10 ms to 1800 s. We find that coupling between discrete traps was apparent, in contrast to the commonly employed assumption of independent trap (dis)charging, and increased after 14 MeV neutron irradiation of 2 × 10 13 n/cm 2 and above. Irradiation to a high dose of as much as 7.8 × 10 14 n/cm 2 , which is comparable to eight years exposure to a harsh radiation environment such as the ITER neutral beam injector prototype, increased trapped charge density, and reduced transient drain current to as little as 75% of its equilibrium value. These changes are consistent with displacement damage estimates based on radiation transport calculations.

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Section: Discussionmentioning

confidence: 94%

Section: Current Transient Spectroscopymentioning

confidence: 99%

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Butler

Uren

Lambert

et al. 2018

IEEE Trans. Nucl. Sci.

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“…There are several kinds of acceptor-like defects acting as traps are located in the p-GaN region and AlGaN barrier layer of the device as shown in Fig. 13 (a) and (b) [29]. As for the devices after repetitive TLP stress, the large negative gate voltage results in the electron injection to the p-GaN layer and AlGaN barrier layer from the gate [30,31].…”

Section: Resultsmentioning

confidence: 99%

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and low-frequency noises (LFN) are analyzed in detail before and after reverse electrostatic discharge (ESD) stress. The experimental results show that the electrical characteristics of the devices gradually degraded as the transmission line pulse (TLP) pules increased. Subsequently, the LFN measurements are performed over the frequency range of 1 Hz-10 KHz by increasing TLP pulses. Finally, the recovery tendency of DC (direct current) characteristics and trap density are studied and discussed after resting the device at room temperature for 1 to 3 months. These results physically confirm that the mechanism of the performance degradation and recovery of the devices could be attributed to the trapping and releasing processes of electrons in the p-GaN layer and AlGaN barrier layer of AlGaN/GaN HEMTs, which change the electric field distribution under the gate.

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“…In offstate, electroluminescence images detect the presence of localized leakage paths which may correspond to dislocations and act as preferential paths for electron trapping. Degradation is therefore preliminary attributed to trapping effects, enhanced by electric field, as shown in [21], [22]. In semi-on state and on-state, the effects of selfheating and trapping effects are the main cause of degradation.…”

Section: Discussionmentioning

confidence: 99%

Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs

Gao

Meneghini

Harrouche

et al. 2020

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in the nine device groups, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may correspond to dislocations and act as preferential paths for electron trapping. Degradation is therefore preliminary attributed to hot-electron trapping, enhanced by electric fields.

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Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Cited by 55 publications

References 46 publications

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs

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