Multiple electron-beam lithography

Chang, T. H. P.; Mankos, M.; Lee, Kim Y.; Muray, L. P.

doi:10.1016/s0167-9317(01)00528-7

Cited by 116 publications

(81 citation statements)

References 37 publications

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“…[15][16]24 On the other hand, the resolution of the SEM image is basically determined by the spot size of the incident beam, and that is determined by the *Address all correspondence to: Susumu Iida, E-mail: susumu.iida@eidec.co .jp beam current and beam energy. 10 In order to analyze the defect detectability using PEM and SEM, simulated PEM and SEM images with hp 64-nm L/S patterned EUV masks were obtained using CHARIOT Monte Carlo software (Abeam Technologies Inc.). 25 The software with 72 cores was installed in an all-in-one server computer, Proliant DL 980 G2 (Hewlett-Packard) with 80 cores.…”

Section: Methodsmentioning

confidence: 99%

“…However, high current densities of a focused illumination beam degrade the resolution due to blurring caused by the space charge effect. 10 The projection-type microscope is free from the space charge limit because of its wider illumination beam. 2 Moreover, any resolution degradation due to the aberration of imaging electron optics (EO) can be improved by the aberration correction systems.…”

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confidence: 99%

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Investigation of defect detectability for extreme ultraviolet patterned mask using two types of high-throughput electron-beam inspection systems

Iida¹,

Hirano²,

Amano³

et al. 2016

J. Micro/Nanolith. MEMS MOEMS

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"Investigation of defect detectability for extreme ultraviolet patterned mask using two types of high-throughput electron-beam inspection systems," J. Abstract. Defect detectability using electron-beam (EB) inspection for an extreme ultraviolet (EUV) mask was investigated by comparing a projection electron microscope (PEM) and a scanning electron microscope (SEM) inspection system. The detectability with EB does not coincide with the printability data because the contrasts of the EUV aerial image and EB image for EUV mask are reversed. The 16-nm-sized defect on a half-pitch 64-nm line and space (L/S) pattern is detected even when the line edge roughness is taken into account in both PEM and SEM inspections by applying a special algorithm for image processing. The required and robust inspection conditions, such as the number of electrons per pixel and pixel size (resolution), were examined for an SEM inspection system. The throughput of the PEM inspection system corresponds to that of the multibeam SEM one with 200 to 1850 beams. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

Investigation of defect detectability for extreme ultraviolet patterned mask using two types of high-throughput electron-beam inspection systems

Iida¹,

Hirano²,

Amano³

et al. 2016

J. Micro/Nanolith. MEMS MOEMS

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“…The most promising advantage of a microcolumn is that the multiple electron beam system can be developed by using it as a basis and the multiple electron beam system can be practically applied for high resolution lithography or inspection by overcoming the drawback of low throughput [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Electron Emission Characteristics of W and CNT Field Emitter for Microcolumn

Sharma¹,

Kanth²,

Kim³

et al. 2017

Asian J. Chem.

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“…Shaped beams and multibeam exposure tools can be faster because the overall beam current can be higher. 13,14 To increase the write speed of any EBL system, the exposure time and the idle time of the system should both be minimized. It has been reported that for newer resists, such as the negative tone resist SU-8, the sensitivity is as high as 3.6 lC/cm 2 when exposed by a 50 kV electron beam.…”

Section: Introductionmentioning

confidence: 99%

Optimization of an electron beam lithography instrument for fast, large area writing at 10 kV acceleration voltage

Greve

Holst

2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Electron beam lithography (EBL) is a maskless lithography technique used in numerous applications for fabrication of ultrahigh-resolution photolithography masks. The main disadvantage of EBL is that it is time-consuming, requiring the pattern to be written in a successive fashion. Various approaches are used to lower the write time. Throughput-oriented EBL instruments used in industrial applications typically apply a very high acceleration voltage (!50 kV). However, in many research environments, more cost-effective instruments are used. These tools are usually optimized for high-resolution writing and are not very fast. Hence, they are normally not considered very suitable for writing large-scale structures with high pattern densities, even for limited resolution applications. In this paper, the authors show that a carefully considered optimization of the writing parameters in an EBL instrument (Raith e_LiNE) can improve the writing time to more than 40 times faster than commonly used instrument settings. The authors have applied the optimization procedure in the fabrication of high-precision photolithography masks. Chrome photolithography masks, 15 mm in diameter with a write resolution of 200 nm, were routinely produced during overnight exposures (less than 9 h). The write time estimated by the instrument software for most commonly used settings was close to 14 days. A comparison with conventional chrome masks fabricated using a high-resolution (128 000 dpi) photolithography mask printer showed that our pattern definition is significantly better.

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Multiple electron-beam lithography

Cited by 116 publications

References 37 publications

Investigation of defect detectability for extreme ultraviolet patterned mask using two types of high-throughput electron-beam inspection systems

Investigation of defect detectability for extreme ultraviolet patterned mask using two types of high-throughput electron-beam inspection systems

Comparison of Electron Emission Characteristics of W and CNT Field Emitter for Microcolumn

Optimization of an electron beam lithography instrument for fast, large area writing at 10 kV acceleration voltage

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