Multiple frequency capacitively coupled plasmas as a new technology for sputter processes

Bienholz, Stefan; Bibinov, Nikita; Awakowicz, Peter

doi:10.1088/0022-3727/46/8/084010

Cited by 23 publications

(28 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is therefore important to acknowledge that during operation the stainless steel surface of the substrate electrode is in fact irrelevant, as its surface properties are governed by a layer of previously deposited aluminum covering the surface. For the purpose of sputtering, the discharge is operated with argon gas at a constant pressure p = 0.5 Pa, assuming a background gas temperature of T = 650 K . A gas density of

n_{A r} \approx 5 .57 \times 1 0^{13} {cm}^{- 3}

consequently dominates the collisional sputtered particle transport of concern.…”

Section: Simulation Scenariomentioning

confidence: 99%

“…anisotropically distributed over a unit sphere. Regarding the energy scaling, equations (8) and (9) [59] Not of concern in this work, but relevant when analytic models are favored instead of lookup tables, are theoretical approaches to collisional interactions of charged particles. An illustrative approach is the one originally published by Langevin in which the charge induced interaction is consistently taken into account.…”

Section: Binary Interactionsmentioning

confidence: 99%

See 1 more Smart Citation

Particle‐in‐Cell/Test‐Particle Simulations of Technological Plasmas: Sputtering Transport in Capacitive Radio Frequency Discharges

Trieschmann

Schmidt

Mussenbrock

2016

Plasma Processes & Polymers

View full text Add to dashboard Cite

The paper provides a tutorial to the conceptual layout of a self‐consistently coupled Particle‐In‐Cell/Test‐Particle model for the kinetic simulation of sputtering transport in capacitively coupled plasmas at low gas pressures. It explains when a kinetic approach is needed and which numerical concepts allow for capturing the often observed nonequilibrium behavior of the charged and neutral particles. At the example of a generic sputtering discharge, both the fundamentals of the applied Monte Carlo methods as well as their conceptual details are elaborated on. Finally, two assumptions that are often exploited in the context of sputtering transport simulations, namely on the energy distribution of impinging ions as well as on the test particle approach, are validated for the proposed example discharge.

show abstract

n_{A r} \approx 5 .57 \times 1 0^{13} {cm}^{- 3}

consequently dominates the collisional sputtered particle transport of concern.…”

Section: Simulation Scenariomentioning

confidence: 99%

Section: Binary Interactionsmentioning

confidence: 99%

Particle‐in‐Cell/Test‐Particle Simulations of Technological Plasmas: Sputtering Transport in Capacitive Radio Frequency Discharges

Trieschmann

Schmidt

Mussenbrock

2016

Plasma Processes & Polymers

View full text Add to dashboard Cite

show abstract

“…Advantage can be taken from simulations of the sputtering process itself using the code TRIDYN [26,27]. The angular and energy distributions of sputtered particles regarded in this work have been obtained by Bienholz et al like so [3]. The flux of aluminum particles sputtered from the target is estimated from the experiment as Γ 0 = 1.6 × 10 15 cm −2 s −1 [5].…”

Section: Discharge Setupmentioning

confidence: 99%

“…On the other hand, towards the target it only drops down to n ≈ 0.98 × 10 10 cm −3 , approximately 95 % the maximum value. Note that the obtained averaged density profile cannot straight forwardly be compared to experimental data from optical emission spectroscopy (OES) measurements as these stem from a line-of-sight integration over the optical acceptance cone of the apparatus [3]. In order to compare our spatially resolved model results with the experimental observations, the calculated data would have to undergo a similar analysis.…”

Section: A Three Dimensional Configurationmentioning

confidence: 99%

See 1 more Smart Citation

Transport of sputtered particles in capacitive sputter sources

Trieschmann

Mussenbrock

2015

Journal of Applied Physics

View full text Add to dashboard Cite

The transport of sputtered aluminum inside a multi frequency capacitively coupled plasma chamber is simulated by means of a kinetic test multi-particle approach. A novel consistent set of scattering parameters obtained for a modified variable hard sphere collision model is presented for both argon and aluminum. An angular dependent Thompson energy distribution is fitted to results from Monte Carlo simulations and used for the kinetic simulation of the transport of sputtered aluminum. For the proposed configuration the transport of sputtered particles is characterized under typical process conditions at a gas pressure of p = 0.5 Pa. It is found that -due to the peculiar geometric conditions -the transport can be understood in a one dimensional picture, governed by the interaction of the imposed and backscattered particle fluxes. It is shown that the precise geometric features play an important role only in proximity to the electrode edges, where the effect of backscattering from the outside chamber volume becomes the governing mechanism.

show abstract

Redox-Based Bi-Layer Metal Oxide Memristive Devices

Zahari,

Park,

Mahadevaiah

et al. 2023

Springer Series on Bio- And Neurosystems

View full text Add to dashboard Cite

In a memristor or a so-called memristive device, the resistance state depends on the previous charge flow through the device. The new resistance state is stored and classifies a memristor as a non-volatile memory device. This likewise unique and simple feature qualifies memristive devices as attractive compartments with regard to the development of a universal memory and beyond von Neumann computing architectures, including in-memory computing and neuromorphic circuits. In this chapter, we present studies on two kinds of bi-layer metal oxide memristive devices with the layer sequences Nb/NbO$$_{\textrm{z}}$$ z /Al$$_2$$ 2 O$$_3$$ 3 /Nb$$_{\textrm{x}}$$ x O$$_{\textrm{y}}$$ y /Au and TiN/TiO$$_\textrm{x}$$ x /HfO$$_\textrm{x}$$ x /Au, either prepared by reactive DC-magnetron sputtering, etching and optical lithography. It is shown that the memristive properties of such devices can be engineered, which enables tailoring of the memristive devices for particular applications.

show abstract

Multiple frequency capacitively coupled plasmas as a new technology for sputter processes

Cited by 23 publications

References 24 publications

Particle‐in‐Cell/Test‐Particle Simulations of Technological Plasmas: Sputtering Transport in Capacitive Radio Frequency Discharges

Particle‐in‐Cell/Test‐Particle Simulations of Technological Plasmas: Sputtering Transport in Capacitive Radio Frequency Discharges

Transport of sputtered particles in capacitive sputter sources

Redox-Based Bi-Layer Metal Oxide Memristive Devices

Contact Info

Product

Resources

About