Multiple-Height Microstructure Fabricated by Deep Reactive Ion Etching and Selective Ashing of Resist Layer Combined with Ultraviolet Curing

Kumagai, Shinya; Hikita, Akiyoshi; Iwamoto, Takuya; Tomikawa, Takashi; Hori, Masaru; Sasaki, Masahide

doi:10.7567/jjap.51.01ab04

Cited by 6 publications

(2 citation statements)

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“…2). [21][22][23][24][25][26] The thicknesses of the handle, buried oxide (BOX), and device layers were 200, 1, and 2 µm, respectively. The nozzle fabrication was started from the device layer.…”

Section: Device Fabricationmentioning

confidence: 99%

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Localized plasma irradiation through a micronozzle for individual cell treatment

Shimane

Kumagai

Hashizume

et al. 2014

Jpn. J. Appl. Phys.

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A micronozzle device was fabricated for the localized plasma treatment of a cell. The device was attached to the tips of two ϕ1.5 mm capillary tubes injecting and evacuating the discharging plasma gas. At the bottom of the channel where the discharging gas flows, nozzle holes (ϕ2%30 µm) were prepared. Controlling the injecting and evacuating gas flows made the pressure in the channel negative or positive relative to the atmosphere. The cells were trapped or released through the nozzle holes. When the cells were trapped, the nozzle hole also defined the area of plasma treatment. An atmospheric-pressure microplasma was generated (He: 0.3 L/min, power: 30 W) for localized treatment. The test specimen was a plant cell, lily pollen (length: 100-140 µm). No burning of the pollen was observed during the 10 min plasma treatment. Only part of the surface reacted with the plasma irradiation. The depth of removal was about 1.5 µm.

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Section: Device Fabricationmentioning

confidence: 99%

“…The above embedded mask structures were prepared with only photoresist material. 21) Compared with the embedded masks of SiO 2 , SiN, or metal materials, the embedded mask of the photoresist has the advantage of low formation temperature. Furthermore, there is no risk of metal contamination during…”

Section: Device Fabricationmentioning

confidence: 99%