The
morphology of the end facet has a great effect on the performance
of the one-dimensional semiconductor nanostructure. In terms of the
lattice structure, the end facet of synthesized CdS nanostructures
is usually hexagonal-shaped. Therefore, morphological tunability of
the end facet for CdS is still a challenge. In this work, quasi-rectangular
cross-sectional Sn-doped CdS nanowires were successfully synthesized
by the chemical vapor deposition method. The crystal and morphological
properties of synthesized nanowires were characterized by transmission
electron microscopy and scanning electron microscopy. Because of the
high crystal quality and well-cleaved surface, optically pumped whispering
gallery mode lasing is realized at room temperature with a threshold
of 11.3 mW/cm2. Compared to the hexagonal-shaped Sn-doped
CdS nanowires, the tunability of the output mode is achieved. Temperature-dependent
photoluminescence spectra were measured, and the temperature coefficient
is determined to be −0.515 meV·K–1.
In addition, the activation energy was fitted to be 43.01 meV, illustrating
that the main carrier decay channel exhibits exciton recombination.
The quasi-rectangular cross-sectional Sn-doped CdS nanowire-based
photodetectors presented a maximum current on/off ratio of 3 ×
102. The photoresponsivity and specific detectivity were
estimated to be 0.22 mA/W and of 1.14 × 1012 Jones
under the illumination of 405 nm laser with a laser density of 495
μW/cm2 at V
DS = 3 V.
Moreover, n type doping behavior is determined by the field effect
transistor device, and the field effect mobility is calculated to
be 0.18 cm2·V–1·s–1. Our work provides a new way to tailor the properties of CdS for
the application in integrated photonic and optoelectronic devices.