Organic materials with long‐lived, color‐tunable phosphorescence are potentially useful for optical recording, anti‐counterfeiting, and bioimaging. Herein, we develop a series of novel host–guest organic phosphors allowing dynamic color tuning from the cyan (502 nm) to orange red (608 nm). Guest materials are employed to tune the phosphorescent color, while the host materials interact with the guest to activate the phosphorescence emission. These organic phosphors have an ultra‐long lifetime of 0.7 s and a maximum phosphorescence efficiency of 18.2 %. Although color‐tunable inks have already been developed using visible dyes, solution‐processed security inks that are temperature dependent and display time‐resolved printed images are unprecedented. This strategy can provide a crucial step towards the next‐generation of security technologies for information handling.

Studies on the influence of four different solvents on the morphology and photovoltaic performance of bulk‐heterojunction films made of poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl‐C61 butyric acid methyl ester (PCBM) via spin‐coating for photovoltaic applications are reported. Solvent‐dependent PCBM cluster formation and P3HT crystallization during thermal annealing are investigated with optical microscopy and grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) and are found to be insufficient to explain the differences in device performance. A combination of atomic force microscopy (AFM), X‐ray reflectivity (XRR), and grazing‐incidence small‐angle X‐ray scattering (GISAXS) investigations results in detailed knowledge of the inner film morphology of P3HT:PCBM films. Vertical and lateral phase separation occurs during spin‐coating and annealing, depending on the solvent used. The findings are summarized in schematics and compared with the IV characteristics. The main influence on the photovoltaic performance arises from the vertical material composition and the existence of lateral phase separation fitting to the exciton diffusion length. Absorption and photoluminescence measurements complement the structural analysis.

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Figure 2. Steroid based host matrix in realizing RTP emission. (a) Chemical structures of steroid host and second amino-substituted deuterated carbon as well as the design principle in realizing the RTP emission. Reproduced with permission. 39 Copyright 2013, Wiley. (b) Chemical structures of host 4, guest 3, and dispersant 5 as well as the application in thermal reversible recording materials. Reproduced with permission. 40 Copyright 2013, Wiley. (K r = phosphorescent decay rate, K q = rate of quenching long-lived triplet excitons).

Polarization-sensitive photodetectors are highly desirable for high-performance optical signal capture and stray light shielding in order to enhance the capability for detection and identification of targets in dark, haze, and other complex environments. Usually, filters and polarizers are utilized for conventional devices to achieve polarization-sensitive detection. Herein, to simplify the optical system, a two-dimensional self-powered polarization-sensitive photodetector is fabricated based on a stacked GeSe/MoS2 van der Waals (vdW) heterojunction which facilitates efficient separation and transportation of the photogenerated carriers because of type-II band alignment. Accordingly, a high-performance self-powered photodetector is achieved with merits of a very large on–off ratio photocurrent at zero bias of currently 104 and a high responsivity (R λ) of 105 mA/W with an external quantum efficiency of 24.2%. Furthermore, a broad spectral photoresponse is extended from 380 to 1064 nm owing to the high absorption coefficient in a wide spectral region. One of the key benefits from these highly anisotropic orthorhombic structures of layered GeSe is self-powered polarization-sensitive detection with a peak/valley ratio of up to 2.95. This is realized irradiating with a 532 nm wavelength laser with which a maximum photoresponsivity of up to 590 mA/W is reached when the input polarization is parallel to the armchair direction. This work provides a facile route to fabricate self-powered polarization-sensitive photodetectors from GeSe/MoS2 vdW heterojunctions for integrated optoelectronic devices.