In this study, we report the synthesis, properties, and electrical memory characteristics of new diblock copolymers, polystyrene-block-poly(styrene-pyrene) (PS-b-P(St-Py)), prepared by combining atom transfer radical polymerization and Suzuki coupling reaction. The effects of the St-Py block chain length on the electronic energy level, photophysical properties, and memory characteristics were explored. The PS 42 -b-P(St-Py) 108 and PS 66 -b-P(St-Py) 67 devices exhibited a dynamic random access memory characteristics with different turn-on threshold voltages of -2.7 and -3.1 V, respectively. Moreover, these memory devices showed a high ON/OFF current ratio of 10 9 and were electrically stable for at least 10 4 s in both ON and OFF states. However, the PS 113 -b-P(St-Py) 45 -based device displayed an insulating state in a low current variation of 10 -12 to 10 -14 A, which had a short St-Py block length. The mechanism of the switching behavior was explained by the charge hopping conduction between the pyrene units with coexisting charge-trapping environment. The volatility of the memory effect was depended on the ability of charge trapping/back transferring of trapped charge.
Electronic supplementary material The online version of this article (The present study suggested that the electrical memory characteristics could be efficiently tuned through the block ratio between insulating segment and pendantconjugated segment of the diblock polymers.