Multivalley transport and the integer quantum Hall effect in a PbTe quantum well

Chitta, V. A.; Desrat, Wilfried; Maude, D. K.; Piot, B. A.; Oliveira, N. F.; Rappl, P. H. O.; Ueta, A. Y.; Abramof, E.

doi:10.1103/physrevb.72.195326

Cited by 23 publications

(24 citation statements)

References 23 publications

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“…Alternatively, one can achieve the topological regime by growing these materials on substrates with smaller lattice constants. As a precedent, high-quality PbTe quantum wells have been fabricated and exhibit ballistic transport [34,35]. Moreover, the alloys Pb 1−x Sn x Te and Pb 1−x Sn x Se undergo band inversion as Sn composition increases [36,37], and hence become topological crystalline insulators on the inverted side.…”

Section: Discussionmentioning

confidence: 99%

Topological crystalline insulators in the SnTe material class

et al. 2012

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Topological crystalline insulators are new states of matter in which the topological nature of electronic structures arises from crystal symmetries. Here we predict the first material realization of topological crystalline insulator in the semiconductor snTe by identifying its non-zero topological index. We predict that as a manifestation of this non-trivial topology, snTe has metallic surface states with an even number of Dirac cones on high-symmetry crystal surfaces such as {001}, {110} and {111}. These surface states form a new type of high-mobility chiral electron gas, which is robust against disorder and topologically protected by reflection symmetry of the crystal with respect to {110} mirror plane. Breaking this mirror symmetry via elastic strain engineering or applying an in-plane magnetic field can open up a continuously tunable band gap on the surface, which may lead to wide-ranging applications in thermoelectrics, infra-red detection and tunable electronics. Closely related semiconductors PbTe and Pbse also become topological crystalline insulators after band inversion by pressure, strain and alloying.

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Section: Discussionmentioning

confidence: 99%

Topological crystalline insulators in the SnTe material class

et al. 2012

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“…Note that it is not surprising that the Fermi level be slightly different in different valleys, as the Pb 1-x Sn x Te/BaF 2 (111) system is known to exhibit a strong thermal expansion mismatch at low temperature, that may shift the oblique bands up in energy with respect to the longitudinal bands. This has been observed in IV–VI epilayers and quantum wells grown on BaF 2 (111) 44 45 46 .…”

Section: Resultsmentioning

confidence: 57%

Massive and massless Dirac fermions in Pb1−xSnxTe topological crystalline insulator probed by magneto-optical absorption

Assaf

Phuphachong

Volobuev

et al. 2016

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Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk states are quantized into Landau levels that disperse as B1/2, and are thus difficult to distinguish. In this work, magneto-optical absorption is used to probe the Landau levels of high mobility Bi-doped Pb0.54Sn0.46Te topological crystalline insulator (111)-oriented films. The high mobility achieved in these thin film structures allows us to probe and distinguish the Landau levels of both surface and bulk Dirac fermions and extract valuable quantitative information about their physical properties. This work paves the way for future magnetooptical and electronic transport experiments aimed at manipulating the band topology of such materials.

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“…We also considered that just the first subband of the longitudinal valley is occupied based on the results presented in Ref. [26] and considering our Fermi energy (E F = 2 k 2 F /2m * , where k F is the Fermi wave vector) of about 18 meV.…”

Section: Resultsmentioning

confidence: 99%

Spin-Orbit Coupling in n-Type PbTe/PbEuTe Quantum Wells

et al. 2011

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Magnetoresistance measurements were performed on an n-type PbTe/PbEuTe quantum well and weak antilocalization effects were observed. This indicates the presence of spin-orbit coupling phenomena and we showed that the Rashba effect is the main mechanism responsible for this spin-orbit coupling. Using the model developed by Iordanskii et al., we fitted the experimental curves and obtained the inelastic and spin-orbit scattering times. Thus we could compare the zero field energy spin-splitting predicted by the Rashba theory with the energy spin-splitting obtained from the analysis of the experimental curves. The final result confirms the theoretical prediction of strong Rashba effect on IV-VI based quantum wells.

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Multivalley transport and the integer quantum Hall effect in a PbTe quantum well

Cited by 23 publications

References 23 publications

Topological crystalline insulators in the SnTe material class

Topological crystalline insulators in the SnTe material class

Massive and massless Dirac fermions in Pb1−xSnxTe topological crystalline insulator probed by magneto-optical absorption

Spin-Orbit Coupling in n-Type PbTe/PbEuTe Quantum Wells

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