Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy

Chemali, Chadi El; Moyne, James; Khan, Kareemullah; Nadeau, Rock; Smith, Paul W.; Colt, John; Chapple‐Sokol, J.; Parikh, Tarun

doi:10.1116/1.582342

Cited by 14 publications

(2 citation statements)

References 2 publications

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“…The WIWNU can be characterized in a number of ways (7) and generally degrades with time because the processing environment is dynamic. Baseline WIWNU can be improved through multi-zone pressure control (8,9) combined with integrated pre and post metrology. Pad profile optimization can be used to reduce consumable aging effects (10).…”

Section: With-in-wafer Non-uniformity (Wiwnu)mentioning

confidence: 99%

A Modeling Study on the Layout Impact of With-In-Die Thickness Range for STI CMP

Kıncal

Basim

2013

ECS Trans.

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Chemical Mechanical Planarization process has a proven track record as an effective method for planarizing the wafer surface at multiple points of the semiconductor manufacturing flow. One of the most challenging aspects of the CMP process, particularly in applications like Shallow Trench Isolation (STI), is the difference in relative removal rates of the different materials that are being polished. A certain amount of over-polish is required to clear oxide on top of the nitride, however, this over-polish may also lead to significant problems like dishing and erosion (introducing additional topography after the film has been planarized). This work formulates a methodology to predict how this additional topography is modulated by incoming layout properties introducing a parameter to accurately characterize line and space width on a layout with random geometric shapes.

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Section: With-in-wafer Non-uniformity (Wiwnu)mentioning

confidence: 99%

A Modeling Study on the Layout Impact of With-In-Die Thickness Range for STI CMP

Kıncal

Basim

2013

ECS Trans.

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“…The percentage ratio of the standard deviation of thickness relative to the averaged value was used to calculate the WIWNU [12][13][14]. A surface profile topography system (KLA-Tencor HRP-350) was used to measure the surface roughness and the Cu dishing on Si wafers.…”

Section: Cmp Experiments and Characterizationsmentioning

confidence: 99%

Y2O3 nanosheets as slurry abrasives for chemical-mechanical planarization of copper

Chen

Zhao

et al. 2013

Friction

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Continued reduction in feature dimension in integrated circuits demands high degree of flatness after chemical mechanical polishing. Here we report using new yttrium oxide (Y 2 O 3 ) nanosheets as slurry abrasives for chemical-mechanical planarization (CMP) of copper. Results showed that the global planarization was improved by 30% using a slurry containing Y 2 O 3 nanosheets in comparison with a standard industrial slurry. During CMP, the two-dimensional square shaped Y 2 O 3 nanosheet is believed to induce the low friction, the better rheological performance, and the laminar flow leading to the decrease in the within-wafer-non-uniformity, surface roughness, as well as dishing. The application of the two-dimensional nanosheets as abrasive in CMP would increase the manufacturing yield of integrated circuits.

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Impact of Pad Conditioning on Thickness Profile Control in Chemical Mechanical Planarization

Kıncal

Basim

2012

Journal of Elec Materi

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Chemical mechanical planarization (CMP) has been proven to be the best method to achieve within-wafer and within-die uniformity for multilevel metallization. Decreasing device dimensions and increasing wafer sizes continuously demand better planarization, which necessitates better understanding of all the variables of the CMP process. A recently highlighted critical factor, pad conditioning, affects the pad surface profile and consequently the wafer profile; in addition, it reduces defects by refreshing the pad surface during polishing. This work demonstrates the changes in the postpolish wafer profile as a function of pad wear. It also introduces a wafer material removal rate profile model based on the locally relevant Preston equation by estimating the pad thickness profile as a function of polishing time. The result is a dynamic predictor of how the wafer removal rate profile shifts as the pad ages. The model helps fine-tune the pad conditioner operating characteristics without the requirement for costly and lengthy experiments. The accuracy of the model is demonstrated by experiments as well as data from a real production line. Both experimental data and simulations indicate that the smaller conditioning disk size and extended conditioning sweep range help improve the post-CMP wafer planarization. However, the defectivity tends to increase when the conditioning disk sweeps out of the pad radius; hence, the pad conditioning needs to be designed by considering the specific requirements of the CMP process conducted. The presented model predicts the process outcomes without requiring detailed experimentation.

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Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy

Cited by 14 publications

References 2 publications

A Modeling Study on the Layout Impact of With-In-Die Thickness Range for STI CMP

A Modeling Study on the Layout Impact of With-In-Die Thickness Range for STI CMP

Y2O3 nanosheets as slurry abrasives for chemical-mechanical planarization of copper

Impact of Pad Conditioning on Thickness Profile Control in Chemical Mechanical Planarization

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