Mutual thermal coupling in SiGe:C HBTs

Weiß, M.; Sahoo, Amit Kumar; Maneux, Cristell; Fregonèse, Sébastien; Zimmer, Thomas

doi:10.1109/sbmicro.2013.6676131

Cited by 14 publications

(15 citation statements)

References 9 publications

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“…4) show a slight decrease (∼1.5%) with the power dissipation, which is consistent with the behavior obtained in [7]. Nevertheless, for the modeling of thermal coupling, this minor impact is neglected in this paper also due to the aforementioned achievable accuracy for the extraction of the thermal resistances and respective coupling factors.…”

Section: Measurement Resultssupporting

confidence: 88%

“…This method is designated in the following as heatsense method. In contrast to the linearized V BE sensitivity used in [6] and [7], this paper employs the emitter current as TSP. For calibration purposes, the temperature dependence of the emitter current in forward-gummel biasing has to be determined and modeled.…”

Section: Parameter Extraction Methodsmentioning

confidence: 99%

“…The latter methodology relies on additional thermal imaging equipment to determine the coupling and its accuracy is limited by the resolution of thermal imaging. Although in [6] and [7] thermal coupling coefficients have been determined based on purely electrical data, an adjustable scaling approach to characterize different than measured structures is not being presented. To overcome these issues, here a methodology based on a simple test structure, electrical dc measurements only, and a calibrated fast solution of the heat transport equation is proposed.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Lehmann

Zimmermann

Pawlak

et al. 2014

IEEE Trans. Electron Devices

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A strategy for compact modeling the static thermal coupling between the emitter fingers of SiGe heterojunction bipolar transistors (SiGe-HBTs) is described. An extraction methodology that includes the nonlinear temperature dependence of the thermal conductivity is introduced and applied to suitable test structures. The experimental results are used for calibrating a 3-D numerical solution of the equation for heat conduction based on a Green's function approach. The latter can then be employed for generating thermal coupling networks for arbitrary transistor configurations.

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Section: Measurement Resultssupporting

confidence: 88%

Section: Parameter Extraction Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Lehmann

Zimmermann

Pawlak

et al. 2014

IEEE Trans. Electron Devices

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“…The transistor has electrically separated but thermally coupled five emitters with w E xl E =0.23x5μm 2 (for each finger) and a common collector. Each one of the five-emitters is accessible, while the bases are all grounded as detailed in [11].…”

Section: Resultsmentioning

confidence: 99%

“…For the electrical networks of all five transistors, we used HICUM/L2 models [1]. Parameters corresponding to the thermal network are extracted following the technique detailed in [11]. The sets of parameters used in both the models are identical.…”

Section: Resultsmentioning

confidence: 99%

Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs

Balanethiram

Chakravorty

D'Esposito

et al. 2015

2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM

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A computationally efficient model for static selfheating and thermal coupling in a multi-finger bipolar transistor is proposed. Compared to an existing state-of-the-art model, our model differs only in the implementation strategy keeping the physical basis intact. The formulated model is implemented in Verilog-A without using any voltage controlled voltage sources. Temperature dependence of the thermal resistances are considered within the framework of the model. The number of extra nodes in our model reduces to 2n from n 2 required in the stateof-the-art model with n as the number of emitter fingers in a transistor. The simulation results of our model are found to be identical with those of the state-of-the-art model demonstrating the capability of accurately considering the static self-heating and thermal coupling in a simple way. The model is found to accurately predict the measured data of a five-finger transistor. It is found that in high current operating regimes, our five finger transistor model simulates around 11% faster compared with the state-of-the-art model.

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