MXene-contact enhanced broadband photodetection in centimeter level GeS films

Abstract

The persistent pursuit of broadband photodetectors derives from their unique properties for promising applications such as optoelectronic devices, imaging sensors, and neuromorphic computing. Here, we fabricated high-performance, ultra-wide spectral response (250-1064 nm) and easy-processing spin-deposition photodetector based on amorphous GeS (a-GeS) films by using Ti3C2Tx transparent electrodes as contacts. In addition, photodetectors based MXenes contacts have larger photocurrent compared with Au contacts because MXenes conductive films have larger photo-responsive active areas and the surface plasmon-assisted hot carriers generated by the laser irradiation on MXenes. As-prepared photodetectors based on MXenes electrodes exhibit a photo-to-dark current ratio of up to 3.91 ×102 under a bias of 8 V, coupled with the response speed of 59 ms, photoresponsivity (166 mAW−1) and high detectivity (4.41 × 1010 Jones). This work combining amorphous materials with highly conductive MXene film has excellent application prospects for ultra-wide spectral response optoelectronic devices.

Facile Synthesis of Two Dimensional (2D) V2O5 Nanosheets Film towards Photodetectors

“…The quantitative analysis of the experimental data clearly shows that the equation was fitted to be I ph ~ P 0.955 . As shown in the fitted curve, the photocurrent gradually increases sub-linearly with increasing light density at a voltage of 5 V. In accordance with the results and reports of previous studies, the deviation of the slope from the ideal value of θ = 1 is caused by complex factors and processes, such as defects in spin-coated prepared nanosheets film and loss of photoexcitation carriers [ 11 , 62 , 63 ]. Therefore, we believe that θ = 0.955 is mainly caused by defects in V 2 O 5 nanosheets film.…”

Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications

“…† All these prove the photosensitivity of the a-IZTO photodetectors. 26 Fig. S6a † shows the change in photocurrent when V ds is between 1 V and 5 V under the irradiation of a 255 nm light source and 1.07 mw cm −2 light intensity, which further shows that the a-IZTO film has excellent photoelectric detection abilities.…”

“…The following equation I ph ∝ P α is obtained by fitting the experimental data, in which α the value is about 0.60. 26 The continuous generation and recombination of electron–hole further proves that there are many adsorption, vacancies, and defect states in an a-IZTO photodetector. Under irradiation by a light source of the same wavelength (255 nm), the measurement of different V ds related to the photocurrent can be seen in Fig.…”

“…The electrical and optical properties of the fabricated devices were measured by using a Keithley 4200A-SCS. 26…”

“…On this basis, through the microand nanoprocessing technology, TFTs and solar blind UV photoelectric detection devices were constructed, and the indexes of the devices were systematically studied and analyzed. [24][25][26][27] In addition, flexible devices were fabricated to further promote the development of a-IZTO films.…”