n‐Channel p‐channel enhancement/inversion mode GaAs‐MISFETs with gate insulating layers formed by dry oxi‐nitridation

Abstract

SUMMARYTest fabrication of n-channel p-channel enhancement/inversion mode GaAs-MISFET with a GaAs oxy-nitrided gate insulation film formed by nitriding after oxidation of the GaAs surface was performed. In comparison with MOSFET with only oxidation, the pinch-off and hysteresis characteristics are improved in MISFET. The confirmed values of the transconductance are 62 mS/mm (V th ~ 0 V), 41 mS/mm (V th ~ 1 V), and 14 mS/mm [V th = V flat (= 1.1 V)] for the n-channel type. These values are 10 to 100 times those reported previously in GaAs-MOSFET. The result realized for the p-channel type MISFET is about 9 mS/mm.

GaAs Metal Insulator Semiconductor Field Effect Transistor with Oxi-Nitrided Gate Film Formed by New Process Utilizing Al Layer as Resist Film for Selective Etching, Oxi-Nitridation and Lift-Off

“…3) The following effects of the subsequent nitridation have been confirmed in the insulator/GaAs interface that was formed by nitridation in N 2 plasma after 8 h oxidation in UV and ozone. [3][4][5] . Recovery of crystallographic order of GaAs in proximity to interface .…”

“…We also reported that nitridation by N 2 plasma after UV and ozone oxidation (hereafter oxinitridation) forms a good quality insulator/GaAs interface with very little crystallographic disorder and improves the electrical and optoelectronic performance of the MIS structure. 3) The authors demonstrated n-channel depletionmode 4) and enhancement-mode 5) GaAs-MISFETs with favorable performances utilizing combinations of UV and ozone and N 2 plasma. They were fabricated using a photo resist film (S1808) as the mask for the recess etching, selective oxi-nitridation and lift-off of the gate electrode, successively.…”