N-Channel Zinc Oxide Nanowire:Perylene Diimide Blend Organic Thin Film Transistors

Chen, Shih‐Pin; Chen, Yan-Sheng; Hsieh, Gen-Wen

doi:10.1109/jeds.2017.2711570

Cited by 6 publications

(2 citation statements)

References 22 publications

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“…ZnO nanowires were produced by vapor phase carbothermic reduction [10,42,43]. A mixture of ZnO powder (99.9%, Alfa Aesar, Ward Hill , MA, USA) and graphite (Sigma-Aldrich, Burlington, MA, USA) (weight ratio ~1:1) in an alumina boat was loaded into the center of a quartz tube furnace, and a Si <111> substrate with a gold film (1.0 nm thick) was placed at the downstream end.…”

Section: Growth Of Zno Nanowiresmentioning

confidence: 99%

Porous Polydimethylsiloxane Elastomer Hybrid with Zinc Oxide Nanowire for Wearable, Wide-Range, and Low Detection Limit Capacitive Pressure Sensor

2022

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We propose a flexible capacitive pressure sensor that utilizes porous polydimethylsiloxane elastomer with zinc oxide nanowire as nanocomposite dielectric layer via a simple porogen-assisted process. With the incorporation of nanowires into the porous elastomer, our capacitive pressure sensor is not only highly responsive to subtle stimuli but vigorously so to gentle touch and verbal stimulation from 0 to 50 kPa. The fabricated zinc oxide nanowire–porous polydimethylsiloxane sensor exhibits superior sensitivity of 0.717 kPa−1, 0.360 kPa−1, and 0.200 kPa−1 at the pressure regimes of 0–50 Pa, 50–1000 Pa, and 1000–3000 Pa, respectively, presenting an approximate enhancement by 21−100 times when compared to that of a flat polydimethylsiloxane device. The nanocomposite dielectric layer also reveals an ultralow detection limit of 1.0 Pa, good stability, and durability after 4000 loading–unloading cycles, making it capable of perception of various human motions, such as finger bending, calligraphy writing, throat vibration, and airflow blowing. A proof-of-concept trial in hydrostatic water pressure sensing has been demonstrated with the proposed sensors, which can detect tiny changes in water pressure and may be helpful for underwater sensing research. This work brings out the efficacy of constructing wearable capacitive pressure sensors based on a porous dielectric hybrid with stress-sensitive nanostructures, providing wide prospective applications in wearable electronics, health monitoring, and smart artificial robotics/prosthetics.

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Section: Growth Of Zno Nanowiresmentioning

confidence: 99%

Porous Polydimethylsiloxane Elastomer Hybrid with Zinc Oxide Nanowire for Wearable, Wide-Range, and Low Detection Limit Capacitive Pressure Sensor

2022

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“…4(b)]. [21,38] Finally, the LUMO levels are calculated using the HOMO levels and 𝐸g, which are 5. Remarkable energy level shifts can be found when the films decrease to the monolayer limit.…”

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confidence: 99%

Large-Area Monolayer n-Type Molecular Semiconductors with Improved Thermal Stability and Charge Injection

Jiang

Peng

Dai

et al. 2023

Chinese Phys. Lett.

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Two-dimensional organic semiconductors (2D OSCs) are important functional materials for the fabrication of next-generation high-performance devices with intrinsic electrical properties. However, the development of large-area n-type 2D OSCs with improved device performance and thermal stability is still a challenge due to the poor understanding of the growth mechanisms and charge transport physics. Here, we fabricated monolayer n-type 2D crystalline semiconducting films with millimeter-sized areas and remarkable morphological uniformity using an antisolvent-confined spin-coating method. The antisolvent can cause a downstream Marangoni flow, which improves the film morphologies. The deposited crystalline monolayer films exhibited excellent thermal stabilities after annealing, which revealed the annealing-induced enhancement of crystallinity. The transistors based on the n-type monolayer crystalline films showed linear output characteristics and superior electron mobilities. The improved charge injection between monolayer films and Au electrodes resulted from the energy level shift as the films decreased to the monolayer, which led to a lower injection barrier. This work demonstrates a promising method for fabricating air-stable, low-cost, high-performance, and large-area organic electronics.

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Small Molecule: Polymer Blends for N‐type Organic Thin Film Transistors via Bar‐coating in Air

et al. 2021

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N-Channel Zinc Oxide Nanowire:Perylene Diimide Blend Organic Thin Film Transistors

Cited by 6 publications

References 22 publications

Porous Polydimethylsiloxane Elastomer Hybrid with Zinc Oxide Nanowire for Wearable, Wide-Range, and Low Detection Limit Capacitive Pressure Sensor

Porous Polydimethylsiloxane Elastomer Hybrid with Zinc Oxide Nanowire for Wearable, Wide-Range, and Low Detection Limit Capacitive Pressure Sensor

Large-Area Monolayer n-Type Molecular Semiconductors with Improved Thermal Stability and Charge Injection

Small Molecule: Polymer Blends for N‐type Organic Thin Film Transistors via Bar‐coating in Air

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