N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence

Santhosh, N.; Filipič, Gregor; Kovačević, Eva; Jagodar, Andrea; Berndt, Johannes; Strunskus, Thomas; Kondo, Hiroki; Hori, Masaru; Tatarova, E.; Cvelbar, Uroš

doi:10.1007/s40820-020-0395-5

Cited by 82 publications

(69 citation statements)

References 74 publications

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“…They also found that the conductivity was decreasing with increasing nitrogen content in the range of N/C from 9.5 to 22%). Different results were reported by Santhosh et al [29], who found decreasing conductivity of N-doped CNWs for both N 2 -and NH 3 -plasma treatment, where the maximum nitrogen content was 8 and 2.8 at.% for N 2 and NH 3 plasma, respectively. No correlation between the measured conductivity and nitrogen content was found by Santhosh et al…”

Section: Discussioncontrasting

confidence: 60%

“… Treatment times for N-doping were mostly of the order of 10 min (without taking into account the time needed for the preparation of the pristine graphene samples in the case of the two-step procedure). In rare cases, treatment times of the order of 10 s were reported [ 29 , 41 ]. RF plasma was used in both cases.…”

Section: Discussionmentioning

confidence: 99%

“…It should be stressed that such systematic experiments take time, especially spectra acquisition and the interpretation. Comparison of surface finishes obtained by different gases (N 2 and NH 3 ) using the same experimental system was reported in [ 29 ]. Nitrogen content in graphene-like materials is generally higher when using N 2 -plasma than NH 3 -plasma.…”

Section: Discussionmentioning

confidence: 99%

“…Santhosh et al [ 29 ] compared the doping of CNWs treated in N 2 or NH 3 plasma. A source of nitrogen radicals was inductively coupled RF plasma, and the samples were placed in the afterglow region.…”

Section: Plasma-assisted Synthesis Of N-doped Graphenementioning

confidence: 99%

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A Review of Strategies for the Synthesis of N-Doped Graphene-Like Materials

et al. 2020

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Methods for synthesizing nitrogen-doped graphene-like materials have attracted significant attention among the scientific community because of the possible applications of such materials in electrochemical devices such as fuel cells, supercapacitors and batteries, as well as nanoelectronics and sensors. The aim of this paper is to review recent advances in this scientific niche. The most common synthesis technique is nitridization of as-deposited graphene or graphene-containing carbon mesh using a non-equilibrium gaseous plasma containing nitrogen or ammonia. A variety of chemical bonds have been observed, however, it is still a challenge how to ensure preferential formation of graphitic nitrogen, which is supposed to be the most favorable. The nitrogen concentration depends on the processing conditions and is typically few at.%; however, values below 1 and up to 20 at.% have been reported. Often, huge amounts of oxygen are found as well, however, its synergistic influence on N-doped graphene is not reported. The typical plasma treatment time is several minutes. The results reported by different authors are discussed, and future needs in this scientific field are summarized. Some aspects of the characterization of graphene samples with X-ray photoelectron spectroscopy and Raman spectroscopy are presented as well.

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Section: Discussioncontrasting

confidence: 60%

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Plasma-assisted Synthesis Of N-doped Graphenementioning

confidence: 99%

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A Review of Strategies for the Synthesis of N-Doped Graphene-Like Materials

et al. 2020

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“…However, the peak from Na is observed in 5, and 8 min plasma treated samples, which can be due to the recombination of the functional entities on the surface during the reformation. The high-resolution C 1s spectra of the non-treated and 1, 3 and 5 min treated samples were deconvoluted to three main peaks located at 284.8, 286.3 and 288.3 eV, corresponding to C–C bonds, sp 3 C–C/carbon singly-bound to oxygen, and the carbon in carbonyl groups ( Figure 5 a–e) [ 52 ]. In addition to these peaks, the plasma-treated sample exhibited an additional peak at 290.8 eV, corresponding to the π-π* shake-up satellite.…”

Section: Resultsmentioning

confidence: 99%

Oriented Carbon Nanostructures from Plasma Reformed Resorcinol-Formaldehyde Polymer Gels for Gas Sensor Applications

et al. 2020

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Oriented carbon nanostructures (OCNs) with dominant graphitic characteristics have attracted research interest for various applications due to the excellent electrical and optical properties owing to their vertical orientation, interconnected structures, electronic properties, and large surface area. Plasma enhanced chemical vapor deposition (PECVD) is considered as a promising method for the large-scale synthesis of OCNs. Alternatively, structural reformation of natural carbon precursor or phenol-based polymers using plasma-assisted surface treatment is also considered for the fabrication of OCNs. In this work, we have demonstrated a fast technique for the synthesis of OCNs by plasma-assisted structure reformation of resorcinol-formaldehyde (RF) polymer gels using radio-frequency inductively coupled plasma (rf-ICP). A thin layer of RF polymer gel cast on a glass substrate was used as the carbon source and treated with rf plasma under different plasma discharge conditions. Argon and hydrogen gases were used in surface treatment, and the growth of carbon nanostructures at different discharge parameters was systematically examined. This study explored the influence of the gas flow rate, the plasma power, and the treatment time on the structural reformation of polymer gel to produce OCNs. Moreover, the gas-sensing properties of as-prepared OCNs towards ethanol at atmospheric conditions were also investigated.

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Effects of Plasma Ions/Radicals on Kinetic Interactions in Nanowall Deposition: A Review

Ishikawa

2024

Adv Eng Mater

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Recent advances in the growth of carbon nanowalls (CNWs) and vertical graphene nanosheets using various plasma‐enhanced chemical vapor deposition methods are reviewed in this paper. Growth methods are classified into hot‐ and cold‐wall reactors equipped with diverse plasma generation systems, and their respective characteristics are summarized, with particular attention to the behavior of reactive species, such as ions and radicals, generated within the plasma. Recent progress in this research domain is outlined for each method, and an organized account of the chemical kinetic phenomena occurring within the plasma is provided. Finally, future perspectives are discussed. Fundamental data are obtained through real‐time in situ measurements of ions and radicals, and the construction of a database from these data offers microscopic insights that significantly enhance processing outcomes for macroscopically controlling the mechanical shapes and chemical properties of CNWs.This article is protected by copyright. All rights reserved.

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N-Graphene Nanowalls via Plasma Nitrogen Incorporation and Substitution: The Experimental Evidence

Cited by 82 publications

References 74 publications

A Review of Strategies for the Synthesis of N-Doped Graphene-Like Materials

A Review of Strategies for the Synthesis of N-Doped Graphene-Like Materials

Oriented Carbon Nanostructures from Plasma Reformed Resorcinol-Formaldehyde Polymer Gels for Gas Sensor Applications

Effects of Plasma Ions/Radicals on Kinetic Interactions in Nanowall Deposition: A Review

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