n-i-p Nanocrystalline Hydrogenated Silicon Solar Cells with RF-Magnetron Sputtered Absorbers

Adhikari, Dipendra; Grice, Corey R.; Marsillac, Sylvain; Collins, R. W.; Podraza, Nikolas J.

doi:10.3390/ma12101699

Cited by 6 publications

(3 citation statements)

References 49 publications

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“…External quantum efficiency (EQE) simulations ,,− use solar cell device structure parameters and infrared to ultraviolet spectral range complex optical properties of component layers as the input. Simulated EQE when matched with measured EQE validates the structural and optical model.…”

Section: Introductionmentioning

confidence: 99%

Optical and Electronic Losses Arising from Physically Mixed Interfacial Layers in Perovskite Solar Cells

Subedi

Song

Chen

et al. 2021

ACS Appl. Mater. Interfaces

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Perovskite solar cell device performance is affected by optical and electronic losses. To minimize these losses in solar cells, it is important to identify their sources. Here, we report the optical and electronic losses arising from physically mixed interfacial layers between the adjacent component materials in highly efficient two terminal (2T) all-perovskite tandem, single-junction wide-bandgap, and single-junction narrow-bandgap perovskite-based solar cells. Physically mixed interfacial layers as the sources of optical and electronic losses are identified from spectroscopic ellipsometry measurements and data analysis followed by comparisons of simulated and measured external quantum efficiency spectra. Parasitic absorbance in the physically mixed regions between silver metal electrical contacts and electron transport layers (ETLs) near the back contact and a physical mixture of commercial indium tin oxide and hole transport layers (HTL) near the front electrical contact lead to substantial optical loss. A lower-density void + perovskite nucleation layer formed during perovskite deposition at the interface between the perovskite absorber layer and the HTL causes electronic losses because of incomplete collection of photogenerated carriers likely originating from poor coverage and passivation of the initially nucleating grains.

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Section: Introductionmentioning

confidence: 99%

Optical and Electronic Losses Arising from Physically Mixed Interfacial Layers in Perovskite Solar Cells

Subedi

Song

Chen

et al. 2021

ACS Appl. Mater. Interfaces

Self Cite

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“…Semitransparent silicon solar cells were fabricated using a previously reported thin-film process . Hydrogenated silicon and doped ZnO films were employed as the absorber and transparent conductive layers, respectively.…”

Section: Methodsmentioning

confidence: 99%

Microstructural Analysis and Optical Property Control of GeTe Chalcogenide-Zirconia Nanoparticle Nanocomposite Films for Device Application

Yoon

Kim

Lee

et al. 2023

ACS Appl. Electron. Mater.

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Phase-change chalcogenide materials are extensively employed in various fields, particularly for electronic and optical applications. In this study, we demonstrated the optical property tuning of germanium telluride (GeTe) chalcogenide-ZrO2 nanocomposite films through microstructural modification using nanoparticle spin-coating and thin film reflow. Pile-up features were observed in the case of spin-coated ZrO2 nanoparticle nanocolloids, which optimized the higher spin speeds to enable the deposition of uniform and high-transmittance ZrO2 nanoparticle layers. Additionally, the capillary-driven mass transport at elevated temperatures resulted in the agglomeration and reflow of GeTe films, particularly in the near-eutectic composition of GeTe(1:4) with reduced thickness. The morphological evolution of the GeTe films was used to fabricate nanocomposite films by sputter depositing the films on spin-coated ZrO2 nanoparticle layers, followed by thermal annealing. The postannealing temperature was crucial for controlling the transmittance, which primarily determined the color of the nanocomposite films. Different colored nanocomposite films were obtained by adjusting the spin speed, GeTe thickness, and postannealing temperature. The results indicated that the application of the developed nanocomposite films to semitransparent photovoltaic devices increased the conversion efficiency owing to the light scattering property of the films, in addition to improving the aesthetic appearance.

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“…To obtain nanocrystalline silicon in a dielectric matrix, various technologies are used: ion implantation of Si + ions into the SiO 2 matrix [7][8][9], laser ablation [10,11], molecular beam epitaxy [12,13], thermal evaporation of SiO powder [14,15], magnetron sputtering of Si and SiO 2 targets, etc. [16,17]. In order to obtain intense luminescence, the content of silicon nanocrystals in the film should be about 50%.…”

Section: Introductionmentioning

confidence: 99%

Effect of Plasma Oxygen Content on the Size and Content of Silicon Nanoclusters in Amorphous SiOx Films Obtained with Plasma-Enhanced Chemical Vapor Deposition

Terekhov,

Terukov,

Undalov

et al. 2023

Symmetry

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The influence of Ar + SiH4 + O2 plasma formulation on the phase composition and optical properties of amorphous SiOx films with silicon nanoclusters obtained using PECVD with DC discharge modulation was studied. Using a unique technique of ultrasoft X-ray emission spectroscopy, it was found that at a 0.15 mol.% plasma oxygen content, amorphous silicon a-Si films are formed. At a high oxygen content (≥21.5 mol.%), nanocomposite films based on SiOx silicon suboxide containing silicon nanoclusters ncl-Si are formed. It was found that the suboxide matrix consists of a mixture of SiO1.3 and SiO2 phases, and the average oxidation state x in the SiOx suboxide matrix is ~1.5. An increase in the concentration of O2 in the reactor atmosphere from 21.5 to 23 mol.% leads to a decrease in ncl-Si content from 40 to 15% and an increase in the average oxidation state x of SiOx from 1.5 to 1.9. In this case, the suboxide matrix consists of two phases of silicon dioxide SiO2 and non-stoichiometric silicon oxide SiO1.7. Thus, according to the experimental data obtained using USXES, the phase composition of these films in pure form differs in their representation in both random coupling and random mixture models. A decrease in the ncl-Si content of SiOx films is accompanied by a decrease in their sizes from ~3 to ~2 nm and a shift in the photoluminescence band from 1.9 eV to 2.3 eV, respectively.

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n-i-p Nanocrystalline Hydrogenated Silicon Solar Cells with RF-Magnetron Sputtered Absorbers

Cited by 6 publications

References 49 publications

Optical and Electronic Losses Arising from Physically Mixed Interfacial Layers in Perovskite Solar Cells

Optical and Electronic Losses Arising from Physically Mixed Interfacial Layers in Perovskite Solar Cells

Microstructural Analysis and Optical Property Control of GeTe Chalcogenide-Zirconia Nanoparticle Nanocomposite Films for Device Application

Effect of Plasma Oxygen Content on the Size and Content of Silicon Nanoclusters in Amorphous SiOx Films Obtained with Plasma-Enhanced Chemical Vapor Deposition

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