n ITO/p InP : a photo and electroluminescent diode

Gouskov, L.; Luquet, H.; Gril, C.; Oemry, Achiar; Savelli, M.

doi:10.1051/rphysap:01982001703012500

Cited by 9 publications

(5 citation statements)

References 17 publications

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“…Lifetimes calculated for bare i-InP and ZnO/i-InP are 0.168 and 0.3699 ns, respectively. Based on XPS results which show the formation of new bonds at the ZnO/InP interface and UPS results which show the band alignment of InP/ZnO, we can conclude that a combination of both surface passivation for the InP surface as well as a large VBO at ZnO/i-InP interface result in the increased carrier lifetime, which agrees with previously reported results [33][34][35].…”

Section: Electronic Property Of the Interface With Ultravio-supporting

confidence: 91%

“…The Fermi levels for all the samples were calibrated using a silver sample as the reference and the valence band maxima (VBM) was estimated by extrapolating the valence band contrib ution. For bulk i-InP, VBM was found at 0.9 eV below the Fermi edge which is very close to previously estimated values for InP(1 0 0) substrates [34]. In a similar fashion, VBM for ZnO/i-InP cell was estimated to be 3.2 eV below the Fermi level as shown in figure 6(a).…”

Section: Electronic Property Of the Interface With Ultraviolet Photoe...supporting

confidence: 88%

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Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

Raj

Santos

Rougieux

et al. 2018

J. Phys. D: Appl. Phys.

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According to the Shockley-Queisser limit, the maximum achievable efficiency for a single junction solar cell is ~33.2% which corresponds to a bandgap (E g) of 1.35 eV (InP). However, the maximum reported efficiency for InP solar cells remain at 24.2% ± 0.5%, that is >25% below the standard Shockley-Queisser limit. Through a wide range of simulations, we propose a new device structure, ITO/ ZnO/i-InP/p + InP (p-i-ZnO-ITO) which might be able to fill this efficiency gap. Our simulation shows that the use of a thin ZnO layer improves passivation of the underlying i-InP layer and provides electron selectivity leading to significantly higher efficiency when compared to their n + /i/p + homojunction counterpart. As a proof-of-concept, we fabricated ITO/ZnO/i-InP solar cell on a p + InP substrate and achieved an open-circuit voltage (V oc) and efficiency as high as 819 mV and 18.12%, respectively, along with ~90% internal quantum efficiency. The entire device fabrication process consists of four simple steps which are highly controllable and reproducible. This work lays the foundation for a new generation of thin film InP solar cells based solely on carrier selective heterojunctions without the requirement of extrinsic doping and can be particularly useful when p-and n-doping are challenging as in the case of III-V nanostructures.

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Section: Electronic Property Of the Interface With Ultravio-supporting

confidence: 91%

Section: Electronic Property Of the Interface With Ultraviolet Photoe...supporting

confidence: 88%

Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

Raj

Santos

Rougieux

et al. 2018

J. Phys. D: Appl. Phys.

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“…One of the best examples is the widely reported high-efficiency ITO/p-InP heterojunction solar cell. During the 90's, ITO junction with InP was very popular for achieving very high efficiencies [87][88][89]. At that time, it was postulated that such high efficiency was due to the formation of buried homojunction between ITO and InP [87].…”

Section: Electron Selective Contactsmentioning

confidence: 99%

Non-epitaxial carrier selective contacts for III-V solar cells: A review

Raj

Tan

Jagadish

2020

Applied Materials Today

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“…Les hétérojonctions mettant en oeuvre l'oxyde métallique conducteur ln2o3 dopé Sn ont été largement développées dans le domaine de la conversion photovoltaïque solaire [10][11]. L'intérêt de l'ITO réside dans le fait qu'il réalise simultanément la zone n de la jonction et l'électrode conductrice, transparente et antireflet.…”

Section: Z 2 Caractéristiques éLectriques Et Photoélec-unclassified

Photodétecteurs à base de Ga1-x Alx Sb dans la gamme 1,3-1,6 μm

Gouskov

Boustani

Bougnot

et al. 1983

Rev. Phys. Appl. (Paris)

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2014 Deux types de photodétecteurs à Ga1-xAlxSb (x ~ 0,17) ont été fabriqués et caractérisés : des diodes mésa diffusées Zn p+/n et des hétérojonctions oxyde d'indium dopé étain (ITO)/Ga1-xAlxSb n. L'alliage ternaire Ga1-xAlxSb était fabriqué par épitaxie en phase liquide sur des substrats de GaSb. Pour les diodes p+/n le courant inverse peut être attribué à l'effet tunnel assisté par des pièges, il a pour valeur 6 x 10-4 A/cm2 à 2014 1 V (Nd-Na = 1016 cm-3). La sensibilité de ces diodes dépend fortement de la profondeur de la jonction, elle est voisine de 0,32 A/W pour une profondeur de 0,5 03BCm. Les diodes ITO/Ga1-xAlxSb sont très analogues à des diodes Schottky. Le claquage se situe vers-15 V à 300 K pour Nd-Na = 7 x 1016 cm-3, Jinv (-1 V) = 1,7 x 10-4 A/cm2. L'efficacité quantique est de 0,5 juste au-dessus du gap, le maximum de réponse spectrale se situe dans le visible. La discussion de ces résultats conduit à conclure que l'amélioration de ces dispositifs implique la diminution du niveau de dopage de la zone active. Abstract.-Two types of photodetectors involving the ternary alloy Ga1-xAlxSb (x ~ 0.17) have been fabricated and characterized : Zn diffused p+/n Ga1-xAlxSb mesa diodes and Sn doped indium oxide (ITO)/Ga1-xAlxSb n heterojunctions. The Ga1-xAlxSb ternary alloy was grown by liquid phase epitaxy on GaSb substrates. For p+/n diodes the reverse current can be attributed to tunnelling through traps, it is about 6 x 10-4 A/cm2 at-1 V for Nd-Na = 1016 cm-3. The sensitivity of these diodes is strongly dependent on the depth of the junction, it is near 0.32 A/W for a 0.5 03BCm deep junction. ITO/Ga1-xAlxSb diodes are very similar to Schottky diodes. The'breakdown occurs near-15 V at 300 K for Nd-Na = 7 x 1016 cm-3, Jinv (-1 V) = 1.7 x 10-4 A/cm2. The spectral response of the quantum efficiency is about 0.5 just below the gap, its maximum appears in the visible range. The discussion of the results leads to the conclusion that these devices may be improved by a decrease of the doping level of the active region.

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n ITO/p InP : a photo and electroluminescent diode

Cited by 9 publications

References 17 publications

Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

Non-epitaxial carrier selective contacts for III-V solar cells: A review

Photodétecteurs à base de Ga1-x Alx Sb dans la gamme 1,3-1,6 μm

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