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Electrical and photovoltaic properties of indiumtinoxide/pInSe/Au solar cellsElectron diffusion length measurements have been performed in p-type InP by different methods: Sut?a~e photovoltage, spectrum analysis of the photocurrent in an indium tin oxide/p-lnP diode, vanatlOn of the photovoltage in this diode versus reverse voltage, and electron beam induced current measurements. The results are compared and discussed in detail. A double p-type region model with different electron diffusion lengths has been proposed to explain the experimental results.

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The calculation of the ionization probability and of the ionization coefficients of the holes of the spin split-off valence band in Ga1- x Al x Sb has been made for various compositions 0<x<0.08. This range allows us to obtain the situations in which the ratio of spin orbit splitting Δ to the energy gap E g decreases from 1.05 to 0.89. It is shown that if the alloy disorder is neglected, the hole ionization coefficient k p exhibits a continuous variation with Δ/E g (or x); if not, k p is strongly increased and shows a maximum for x=0.02 in the composition range in which Δ≥E g (Δ/E g=1.006). The comparison with experimental results is presented and allows an estimation of the mean free path of the holes; the strong influence of this parameter on the k p values is discussed.