N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz

Arias-Purdue, Andrea; Rowell, P.; King, Casey M.; Carter, Andrew D.; Paniagua, A.; Shinohara, Keisuke; Bergman, J.; Urteaga, M.; Miller, Norman N.; Elliott, Michael; Gilbert, Ryan; Herrault, Florian; Green, Daniel; Buckwalter, James F.

doi:10.1109/lmwt.2023.3263058

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N-Polar GaN HEMTs in a High-Uniformity 100-mm Wafer Process With 43.6% Power-Added Efficiency and 2 W/mm at 94 GHz

Cited by 7 publications

References 20 publications

A Heterogeneously-Integrated Ka-Band, N-Polar Gallium Nitride HEMT Amplifier

A Heterogeneously-Integrated Ka-Band, N-Polar Gallium Nitride HEMT Amplifier

Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements

Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz

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