n
          -type delta doped strained quantum well lasers for improved modulation bandwidth

Buchinsky, O.; Blumin, M.; Sarfaty, R.; Fekete, D.; Orenstein, Meir; Eisenstein, G.

doi:10.1063/1.118692

Cited by 5 publications

(1 citation statement)

References 13 publications

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“…The most basic mechanism limiting the modulation capabilities of semiconductor lasers is the gain nonlinearity, which originates from several processes including hot carrier injection [1][2][3]. An attractive way to diminish the hot carrier effect is to employ a delta doped film near the active region [4] or a tunnelling injection (TI) structure [5], which feeds cold carriers from an injection well (IW) reservoir directly to the lasing state. The successful use of TI was demonstrated for quantum well lasers more than twenty years ago [5] and later for quantum dot (QD) lasers at short wavelengths [6] as well as at 1550 nm [7].…”

Section: Introductionmentioning

confidence: 99%

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

et al. 2018

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The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the fact that it avoids hot carrier injection, which is a key performance-limiting factor in all semiconductor lasers. The tunneling injection process is not fully understood microscopically and therefore it is difficult to optimize those laser structures. We present here a numerical study of the broad band carrier dynamics in a tunneling injection quantum dot gain medium in the form of an optical amplifier operating at 1.55 µm.Charge carrier tunneling occurs in a hybrid state that joins the quantum dot first excited state and the confined quantum well -injection well states. The hybrid state, which is placed energetically roughly one LO phonon above the ground state and has a spectral extent of about 5 meV , dominates the carrier injection to the ground state. We calculate the dynamical response of the inversion across the entire gain spectrum following a short pulse perturbation at various wavelengths and for two bias currents. At a high bias of 200 mA, the entire spectrum exhibits gain; at 30 mA, the system exhibits a mixed gain -absorption spectrum. The carrier dynamics in the injection well is calculated simultaneously. We discuss the role of the pulse excitation wavelengths relative to the gain spectrum peak and demonstrate that the injection well responds to all perturbation wavelengths, even those which are far from the region where the tunneling injection process dominates. * ikhanonkin@technion.ac.il

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Section: Introductionmentioning

confidence: 99%

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

et al. 2018

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n -type delta-doped strained quantum well lasers for improved temperature-dependent performance

Buchinsky

Blumin

Fekete

1998

Applied Physics Letters

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It is demonstrated that the incorporation of Te n-type δ doping close to a single-strained InGaAs/GaAs quantum well improves the temperature stability of the laser, as indicated by the higher characteristic temperature and by the reduced sensitivity of the threshold current to temperature variations. This improvement results from the strong coupling between the quantum well and the δ-doping well.

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Si delta doping in a GaN barrier layer of InGaN∕GaN multiquantum well for an efficient ultraviolet light-emitting diode

Kwon

Park

Baek

et al. 2005

Journal of Applied Physics

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The effect of Si delta doping of the GaN barrier on the optical and electrical properties of an InGaN∕GaN ultraviolet light-emitting diode (UV LED) was studied. The photoluminescence (PL) intensity of the multiquantum well (MQW) and the output power of UV LED with an emission wavelength of 385 nm were greatly improved as the result of introducing a Si delta-doping layer in GaN barrier of an InGaN∕GaN MQW. A temperature-dependent PL study showed that the integrated intensity of the PL of a MQW with a Si delta-doping layer was slowly quenched with increasing temperature compared to that of a MQW without a Si delta-doping layer. The improvement in thermal stability and optical power of the UV MQW and LED is attributed to an increase in the injection of electrons from the Si delta-doped GaN barrier layer into the InGaN quantum well layer and an increase in hole accumulation due to the higher valance band offset of a Si delta-doped GaN barrier layer in a MQW structure.

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n -type delta doped strained quantum well lasers for improved modulation bandwidth

Cited by 5 publications

References 13 publications

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

n -type delta-doped strained quantum well lasers for improved temperature-dependent performance

Si delta doping in a GaN barrier layer of InGaN∕GaN multiquantum well for an efficient ultraviolet light-emitting diode

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