n
          -type delta-doped strained quantum well lasers for improved temperature-dependent performance

Buchinsky, O.; Blumin, M.; Fekete, D.

doi:10.1063/1.120599

Cited by 12 publications

(3 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The positive ion background will reduce the population of thermal diffusive electrons in the SCH and as a result will improve the T 0 laser parameter as already measured for quantum-well lasers. 5 Our physical explanation allows one to tune the resonance-emitted wavelength by increasing the doping concentration. A deeper confinement of the ␦-doping ground state allows scattering processes which result in capture by larger dots.…”

Section: Discussionmentioning

confidence: 95%

Temperature dependence of the coupling between n-type δ-doping region and quantum dot assemblies

Fekete

Dery

Rudra

et al. 2006

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

We present experimental evidence that at room temperature the main coupling mechanism between an n-type δ-doping region and an adjacent plane of dots is energy-conserving electron-electron scattering, in which a hot electron in the δ-doping region transfers energy to a deeply confined electron in that region and relaxes to the quantum dot. We demonstrate that at room temperature the increased capture cross section due to electron-electron scattering considerably enhances the injection into the quantum dots with a certain size and thus reduces the phonon bottleneck in quantum dot assemblies for the quantum dots that interact with the δ-doping region. We identify different temperature-dependent injection schemes by comparing the photoluminescence of dilute and dense assemblies with the corresponding photoluminescence of similar structures including n-type δ-doping regions adjacent to the dots’ plane.

show abstract

Section: Discussionmentioning

confidence: 95%

Temperature dependence of the coupling between n-type δ-doping region and quantum dot assemblies

Fekete

Dery

Rudra

et al. 2006

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…These heterostructures were fabricated into devices with good performance [9]. Te doping has also been used in metal-organic chemical vapor deposition to dope InGaAs/AlGaAs HEMTs [10] as well as quantum well lasers [11]. An additional motivation for studying Te doping in InP HEMTs is the Si deactivation problem.…”

Section: Introductionmentioning

confidence: 99%

Growth of InP high electron mobility transistor structures with Te doping

Bennett

Suemitsu

Waldron

et al. 2005

Journal of Crystal Growth

View full text Add to dashboard Cite

“…In III-V compound semiconductors such as GaAs, FETs with characteristics superior to those of conventionally doped transistors have been fabricated using the delta-doping technique [6], which can achieve very narrow doping distribution along the epitaxial growth direction and up to now has been studied in a variety of materials and devices [7][8][9]. It was recently demonstrated that the inclusion of delta doping could improve laser stability in the face of temperature variations, in comparison with conventional quantum well lasers [10].…”

Section: Introductionmentioning

confidence: 99%

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Kim

Yang

Choi

et al. 1999

MRS Internet j. nitride semicond. res.

View full text Add to dashboard Cite

Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 . Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4

show abstract

n -type delta-doped strained quantum well lasers for improved temperature-dependent performance

Cited by 12 publications

References 15 publications

Temperature dependence of the coupling between n-type δ-doping region and quantum dot assemblies

Temperature dependence of the coupling between n-type δ-doping region and quantum dot assemblies

Growth of InP high electron mobility transistor structures with Te doping

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Contact Info

Product

Resources

About