n-type diamond produced by MeV lithium implantation in channeling direction

Chernyshev, V. A.; Meijer, Jan; Grambole, D.; Herrmann, F.; Dagkaldiran, Ü.; Wieck, A. D.

doi:10.1016/j.diamond.2008.04.014

Cited by 6 publications

(1 citation statement)

References 15 publications

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“…With an even deeper state ( E d = 1.7 eV), [ 102 ] Nitrogen is still considered as a donor, especially because it is the main contributor to the negative charge state of NV - centers in most of experimental situations. [ 103,104 ] Lithium implantation was shown to give rise to n‐type conductivity, [ 105 ] but it is owing to interstitial lithium (the n‐type behavior disappears after annealing) which is not suitable for this study because the color centers creation requires a thermal treatment. Oxygen and sulfur are expected to be double donors with acceptable size to fit in substitutional sites.…”

Section: Charge‐assisted Defect Engineeringmentioning

confidence: 99%

Charge‐Assisted Engineering of Color Centers in Diamond

Lühmann

Meijer

Pezzagna

2021

Physica Status Solidi (a)

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Owing to its unique optical and spin properties, the nitrogen‐vacancy (NV) center holds the promise of a diamond‐based room‐temperature scalable quantum computer, but the numerous technical and physical issues are not yet overcome, especially the poor N to NV conversion. The NV and other color centers are, however, successfully used as multitasking quantum sensors, and open new routes in quantum sensing technologies. Most recently, several breakthroughs and demonstrations were achieved, shedding a new light on the feasibility of a NV‐based quantum computer. Herein, the recently developed method of charge‐assisted single defect engineering is reviewed. With a controlled charging of the involved species, it modifies the diffusion or kinetics of defect formation and acts as a catalyzer of the NV creation while hindering the formation of competing and perturbing defects such as divacancies or NVH. Very high NV creation yields up to 75% are obtained and the method is suitable to other impurity‐vacancy defects. Furthermore, it has positive consequences on the charge state stability and coherence time of the NV centers, which is as well discussed. Together with the possibility to nowadays deterministically implant single ions, this powerful method brings the scalability of NV qubits closer.

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Section: Charge‐assisted Defect Engineeringmentioning

confidence: 99%