n-Type polysilicon passivating contact for industrial bifacial n-type solar cells

Stodolny, M.K.; Lenes, Martijn; Wu, Yu Cheng; Janssen, G.J.M.; Romijn, I.G.; Luchies, J.R.M.; Geerligs, L.J.

doi:10.1016/j.solmat.2016.06.034

Cited by 143 publications

(83 citation statements)

References 7 publications

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“…The lower active dopant concentration within the poly-Si(p + ) layer can be partially attributed to the lower doping efficiency of boron atoms than phosphorus atoms [67] based on the theoretical prediction of impurity formation energies and partially attributed to the higher diffusivity of the boron dopants [68] into the silicon bulk which resulted in a deeper boron-diffused junction (see Figure 7). Similar to other reports [65], we also observed experimentally that it is preferable to concentrate all the dopants within the poly-Si layers, as the out-diffusion of dopants is expected to lead to increased surface recombination rates and a corresponding drop in the overall passivation quality as well. Table 2 summarizes our measured passivation quality results on planar symmetrical lifetime test structures with the optimized doped poly-Si(n + ) capping layers on various investigated tunnel oxide candidates (i.e., wet-SiO x , ozone-SiO x , thermal-SiO x ).…”

Section: Screening Lpcvd Poly-si Capping Layers For Contact Passivationsupporting

confidence: 90%

“…The optimization goal is to incorporate as much active dopants within the poly-Si layers as possible while reducing or avoiding the out-diffusion of dopants into the c-Si wafer bulk, which will increase the surface recombination rates and reduce the device performance, as also reported in Ref. [65].…”

Section: Screening Lpcvd Poly-si Capping Layers For Contact Passivationmentioning

confidence: 99%

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Double-Sided Passivated Contacts for Solar Cell Applications: An Industrially Viable Approach Toward 24% Efficient Large Area Silicon Solar Cells

Ling¹,

Zhang²,

Wang³

et al. 2019

Silicon Materials

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Tunnel layer passivated contacts have been successfully demonstrated for next-generation silicon solar cell concepts, achieving improved device performance stemming from the significantly reduced contact recombination of the solar cell contacts. However, these carrier-selective passivated contacts are currently deployed only at the rear side of the silicon solar cell, while the front side adopts a conventional diffused junction and contacting scheme. In this work, we report on the novelty and feasibility of deploying tunnel layer passivated contacts on both sides of a silicon wafer-based solar cell, featuring a textured front surface and a planar rear surface. In particular, we demonstrate that silicon solar cells incorporating our in-house developed electron-selective thermal-SiO x /poly-Si(n +) and hole-selective thermal-SiO x /poly-Si(p +) passivated contacts have a solar cell efficiency potential approaching 24%. Deploying contact passivation only at the rear side of the solar cell, we have reached a solar cell efficiency of 21.7%, using conventional screen printing for metallization. We present a systematic approach of evaluating our in-house developed electron-selective and hole-selective passivated contacts on both textured and planar lifetime test structures, as well as dark I-V test structures, to extract the recombination current density j 0 and the contact resistance R c of the passivated contact, which is used for process optimization as well as for subsequent efficiency potential prediction. The two key challenges aiming at a double-sided integration of passivated contacts are (1) parasitic absorption within the front-side highly doped poly-Si capping layer, requiring the processing of ultrathin (≤10-nm) contact passivation layers. This has been quantified by numerical simulation (using SunSolve™) and also solved experimentally, i.e., processing ultrathin 3-/10-nm hole/electron extracting SiO x /poly-Si(p + /n +) passivated contact layers, reaching an implied open-circuit voltage of 690/703 mV on a planar/textured silicon surface, which will even further enhance after SiN x capping. (2) Ensuring process compatibility with conventional screen printing: Screen printing on electron extracting poly-Si(n +) seems feasible; however, screen printing on holeextracting poly-Si(p +) is still a challenge. Solar cell precursors have been processed, showing excellent pre-metallization results (implied-V OC $ 713 mV). According to 1 our efficiency potential prediction (using the measured j 0 and R c values of our developed contact passivation layers), bifacial double-sided passivated contact solar cells (efficiency potential of $23.2%, using our layers) can clearly outperform rearside-only passivated contact solar cells (efficiency potential of $22.5%).

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Section: Screening Lpcvd Poly-si Capping Layers For Contact Passivationsupporting

confidence: 90%

Section: Screening Lpcvd Poly-si Capping Layers For Contact Passivationmentioning

confidence: 99%

Double-Sided Passivated Contacts for Solar Cell Applications: An Industrially Viable Approach Toward 24% Efficient Large Area Silicon Solar Cells

Ling¹,

Zhang²,

Wang³

et al. 2019

Silicon Materials

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“…Furthermore, it is crucial that defects at the c-Si/SiO x interface are passivated. This can be achieved by hydrogenating the poly-Si layer by means of hydrogen plasma treatments [55] or by capping the poly-Si layer with Al 2 O 3 [56] or SiN x [57]. The band diagram that visually illustrates the working mechanism of an electron-selective passivating contact based on n-type poly-Si is shown in Fig.…”

Section: A Si-based Materialsmentioning

confidence: 99%

Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

Melskens

Loo

Macco

et al. 2018

IEEE J. Photovoltaics

328

254

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DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement:

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“…Such hydrogenation can be realized by exposing the poly-SI films to a remote hydrogen plasma, 27 or alternatively, by capping the poly-Si by thin films of Al 2 O 3 or SiN x followed by thermal annealing. [28][29][30][31] In this work, we adopted a similar approach as the poly-Si case to investigate surface passivation by highly transparent and conductive ZnO films. Specifically, we explore the use of an ultra-thin interface oxide and an Al 2 O 3 capping layer to achieve surface passivation by highly-doped ZnO films that are prepared by atomic layer deposition (ALD).…”

Section: Introductionmentioning

confidence: 99%

Silicon surface passivation by transparent conductive zinc oxide

Loo

Macco

Melskens

et al. 2019

Journal of Applied Physics

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n-Type polysilicon passivating contact for industrial bifacial n-type solar cells

Cited by 143 publications

References 7 publications

Double-Sided Passivated Contacts for Solar Cell Applications: An Industrially Viable Approach Toward 24% Efficient Large Area Silicon Solar Cells

Double-Sided Passivated Contacts for Solar Cell Applications: An Industrially Viable Approach Toward 24% Efficient Large Area Silicon Solar Cells

Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

Silicon surface passivation by transparent conductive zinc oxide

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