2012
DOI: 10.1002/adfm.201202888
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N‐Type Self‐Assembled Monolayer Field‐Effect Transistors and Complementary Inverters

Abstract: This work describes n‐type self‐assembled monolayer field‐effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N‐type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10−3 cm2 V−1 s−1 and on/off current ratios up to 105 are obtained. By implementing n‐type and p‐type transis… Show more

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Cited by 61 publications
(57 citation statements)
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“…1(a)] are not suitable for directly relating the drain current from experiment to theoretical values. The real devices are restricted to operating at relatively short channel lengths (3 μm) and are therefore limited by contact resistance [32][33][34], which limits the drain current dramatically. A comparison requires experimental access to drain currents of devices of a SAM system that is less limited in channel length and/or allows the fabrication of long channel devices with a four-point-probe setup (e.g., such as that used in Ref.…”
Section: Discussionmentioning
confidence: 99%
“…1(a)] are not suitable for directly relating the drain current from experiment to theoretical values. The real devices are restricted to operating at relatively short channel lengths (3 μm) and are therefore limited by contact resistance [32][33][34], which limits the drain current dramatically. A comparison requires experimental access to drain currents of devices of a SAM system that is less limited in channel length and/or allows the fabrication of long channel devices with a four-point-probe setup (e.g., such as that used in Ref.…”
Section: Discussionmentioning
confidence: 99%
“…These films can be incorporated as active layers in thin film transistors, so called self-assembled monolayer field-effect transistors (SAMFETs). [15][16][17][18][19][20] In these devices with real 2D-confined channels, the morphology is of particular interest, as small perturbations in the packing of the molecules, immediately strongly influence the transport properties in the transistor. This, on the other hand means that SAMFETs are an ideal tool to investigate thin film morphologies on the sub-nanometre scale in functionalized self-assembled monolayers.…”
Section: Introductionmentioning
confidence: 99%
“…In principle two synthetic strategies are known 16 to synthesize heterosubstituted PBIs. One of these routes was used for our synthesis and will be described in detail in the following chapter 17 .…”
Section: Synthesismentioning
confidence: 99%