Improvements in thermoelectric material performance over the past two decades have largely been based on decreasing the phonon thermal conductivity. Enhancing the power factor has been less successful in comparison. In this work, a peak power factor of ∼106 μW·cm −1 ·K −2 is achieved by increasing the hot pressing temperature up to 1,373 K in the p-type half-Heusler Nb 0.95 Ti 0.05 FeSb. The high power factor subsequently yields a record output power density of ∼22 W·cm −2 based on a single-leg device operating at between 293 K and 868 K. Such a high-output power density can be beneficial for large-scale power generation applications.half-Heusler | thermoelectric | power factor | carrier mobility | output power density T he majority of industrial energy input is lost as waste heat. Converting some of the waste heat into useful electrical power will lead to the reduction of fossil fuel consumption and CO 2 emission. Thermoelectric (TE) technologies are unique in converting heat into electricity due to their solid-state nature. The ideal device conversion efficiency of TE materials is usually characterized by (1)where ZT is the average thermoelectric figure of merit (ZT) between the hot side temperature (T H ) and the cold side temperature (T C ) of a TE material and is defined aswhere PF, T, κ tot , S, σ, κ L , κ e , and κ bip are the power factor, absolute temperature, total thermal conductivity, Seebeck coefficient, electrical conductivity, lattice thermal conductivity, electronic thermal conductivity, and bipolar thermal conductivity, respectively. Higher ZT corresponds to higher conversion efficiency. One effective approach to enhance ZT is through nanostructuring that can significantly enhance phonon scattering and consequently result in a much lower lattice thermal conductivity compared with that of the unmodified bulk counterpart (2). This approach works well for many inorganic TE materials, such as Bi 2 Te 3 (2), IV-VI semiconductor compounds (3, 4), lead-antimony-silver-tellurium (LAST) (5), skutterudites (6), clathrates (7), CuSe 2 (8), Zintl phases (9), half-Heuslers (10-12), MgAgSb (13, 14), Mg 2 (Si, Ge, Sn) (15, 16), and others.However, nanostructuring is effective only when the grain size is comparable to or smaller than the phonon mean free path (MFP). In compounds with a phonon MFP shorter than the nanosized grain diameters, nanostructuring might impair the electron transport more than the phonon transport, thus potentially decreasing the power factor and ZT. In contrast, improving ZT by boosting the power factor has not yet been widely studied (17)(18)(19)(20). To the best of our knowledge, there is no theoretical upper limit applied to the power factor. Additionally, the output power density ω of a device with hot side at T H and cold side at T C is directly related to the power factor by (21)where L is the leg length of the TE material and PF is the averaged power factor over the leg. As contact resistance limits the reduction of length L, higher power factor favors higher power density when h...