n-type (Zr,Ti)NiSn half Heusler materials via mechanical alloying: Structure, Sb-doping and thermoelectric properties

Ultralow lattice thermal conductivity and improved thermoelectric performance in a Hf-free half-Heusler compound modulated by entropy engineering

“…Significantly, this is also an extremely low value among half-Heusler MNiSn (M = Ti, Zr, Hf) systems. 17,18,53,59,60,62–68…”

“…Signicantly, this is also an extremely low value among half-Heusler MNiSn (M = Ti, Zr, Hf) systems. 17,18,53,59,60,[62][63][64][65][66][67][68] The DS conf dependence of k L for Ti 0.6 Zr 0.4 NiSn 0.98 Sb 0.02 , Ti 0.58 Zr 0.4 Al 0.02 NiSn 0.98 Sb 0.02 and Ti 0.57 Zr 0.4 Al 0.02 Ta 0.01 NiSn 0.98 -Sb 0.02 at 870 K is given in Fig. 3c.…”

“…3d depicts the minimum k L and corresponding weighted mobility m W for MNiSn (M = Ti, Zr, Hf)-based compounds with different levels of DS conf . 17,18,53,59,60,[62][63][64][65][66][67][68] The ratio of m W to k L , which is an important part of the quality factor B, 16,78 can be used to assess the thermoelectric performance of materials. In order to reach an excellent thermoelectric performance, an improved or unaffected m W combined with a reduced k L is necessary.…”

Thermal Conductivity in Thermoelectric Materials

“…( 6) does not obviously apply in the case where the phonon mean free path λ becomes of the order of one-half of the phonon wavelength (λ/2 = πυ/ω). Since the phonon means free path, λ = λ (ω,T), depends on the values of parameters of the Evolution of lattice thermal conductivity in Zr X Ti 1-X NiSn (modified from [34]).…”

“…Thermal Conductivity in Thermoelectric Materials DOI: http://dx.doi.org/10.5772/intechopen.106168 composition dependence of the lattice thermal conductivity in Zr X Ti 1-X NiSn, and stain is required to model the lattice thermal conductivity at room temperature [34].…”