Nano- and microcrystalline diamond deposition on pretreated WC–Co substrates: structural properties and adhesion

Fraga, Mariana Amorim; Contin, Andre; Rodriguez, Laura Angelica Ardila; Neto, José Vieira da Silva; Campos, Raonei Alves; Corat, Evaldo José; Airoldi, V.J. Trava

doi:10.1088/2053-1591/3/2/025601

Cited by 24 publications

(7 citation statements)

References 12 publications

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“…A deposition rate of 0.55 µm/h and 0.8 µm/h was achieved for UNCD and MCD films, respectively. These values are lower than those observed for UNCD and MCD films grown on WC-Co and silicon substrates under the same deposition conditions [3,4]. As can be also seen in Table 2, the sheet resistance of the UNCD film is almost 3 times the value of MCD.…”

mentioning

confidence: 59%

Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates

Fraga

Contin

Savonov

et al. 2018

MSF

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The growth of diamond films on different substrates has been studied extensively to support the emerging technologies ranging from mechanical to nano/microelectronics. It is known that the performance of these applications is affected by diamond film properties, such as structure and morphology. Using chemical vapor deposition (CVD) technique, we have deposited ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films on 4H-SiC substrates and investigated their basic material properties. The understanding and exploitation of the material properties are fundamental to evaluate the potential of UNCD-on-SiC and MCD-on-SiC structures for fabrication of electronic devices and sensors.

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confidence: 59%

Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates

Fraga

Contin

Savonov

et al. 2018

MSF

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“…A sharp peak at 1336 cm −1 corresponding to sp 3 bonding of the diamond can be observed, which moves to a high-frequency direction relative to the bulk diamond's characteristic peak of 1332 cm −1 . The residual stress of films is calculated according to the following equation: 33 σ = −0.567( v m − v 0 ) (GPa) where v m and v 0 are the Raman peak positions of stressed diamond and natural one (1332 cm −1 ), respectively. Hence, the calculated stress is −2.3 GPa, suggesting that the films experience compressive stress.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of a boron-doped nanocrystalline diamond grown on an WC–Co electrode for degradation of phenol

Zhang

Xue²,

Xie

et al. 2022

RSC Adv.

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“…It is also noteworthy that all the samples presented a sharp diamond peak with similar FWHM values, what indicates that the diamond material deposited presents good quality in all samples, however what makes the film a better or worse material is the amount of non-diamond phases incorporated in the coating. The increase of pressure or reduction of temperature is a widely used procedure for controlling grain size of diamond crystals produced by CVD, reported in some of our previous works [51][52][53] and from others [54][55][56] .…”

Section: Raman Spectroscopymentioning

confidence: 99%

Growth and Characterization of Polycrystalline CVD Diamond Films Obtained by MWPACVD at High Power 2,45GHz Microwave Discharge

et al. 2022

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Among all the allotropic forms of carbon, diamond has attracted a broad scientific and technological interest for its extreme and unique properties rarely matched by other materials in nature. In a rapid rise from a technological point of view, much has been achieved in the study of obtaining this material through CVD technique. Studies of CVD diamond growth parameters of monocrystalline structure, underway in the team, are very expensive and time-consuming requiring in-depth studies of CVD diamond growth parameters of polycrystalline structure. So, this work presents an analysis focused on obtaining CVD diamond films with polycrystalline structure through the 2.45 GHz microwave plasma activation method (MWPACVD) in high power regime using a modified substrate holder to find a set of parameters appropriated for getting uniform quality and growth rate of thick films. The films were characterized using Raman scattering spectroscopy and scanning electron microscopy. The results point to optimized conditions for depositing films with growth rates of up to 20 µm/h with low levels of intrinsic stress, good structural quality and uniform microcrystalline morphology along the deposition surface.

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Nano- and microcrystalline diamond deposition on pretreated WC–Co substrates: structural properties and adhesion

Cited by 24 publications

References 12 publications

Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates

Addressing the Properties of Ultranano- and Microcrystalline CVD Diamond Films Grown on 4H-SiC Substrates

Fabrication of a boron-doped nanocrystalline diamond grown on an WC–Co electrode for degradation of phenol

Growth and Characterization of Polycrystalline CVD Diamond Films Obtained by MWPACVD at High Power 2,45GHz Microwave Discharge

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